Method and structure for overcoming discharge shortcoming of semiconductor device during manufacturing process

Abstract

The invention discloses a method for overcoming the discharge shortcoming of a semiconductor device during the manufacturing process, and the method comprises the following steps: forming a source region and a gate on a wafer substrate, wherein the gate is connected with a bottom metal layer through a metal connecting wire, the bottom layer metal is connected with a middle metal layer through a metal connecting wire, and the middle metal layer is connected with a top metal layer through a metal connecting wire; forming a metal capacitor dielectric layer on a sub-top metal layer, forming a tantalum layer at the top of the dielectric layer, and patterning the tantalum layer at the edge of the wafer by using photolithography technique, wherein the patterned tantalum layer and the sub-top metal layer are not tangential at the edges thereof in the vertical direction; etching according to the patterned tantalum layer to obtain an upper plate electrode of the semiconductor device; and depositing to form a top dielectric layer, and forming a through hole on the top dielectric layer by use of photolithography technique and etching technique. The method provided by the invention overcomes the discharge shortcoming of the semiconductor device during the manufacturing process, so as to improve the performance of the finally manufactured semiconductor device.

Description

technical field [0001] The invention relates to semiconductor manufacturing technology, in particular to a method and structure for solving discharge defects in the manufacturing process of semiconductor devices. Background technique [0002] In the manufacturing process of integrated circuits, it includes the front-end manufacturing process and the back-end manufacturing process. Among them, the front-end manufacturing process includes forming the source, drain and gate on the semiconductor device substrate, which is called forming a semiconductor device layer; the back-end process includes forming a metal interconnection layer on the semiconductor device layer and other subsequent processes. [0003] In the back-end process, semiconductor devices need to be metallized. Metallization is the process of depositing a metal film on a dielectric layer and then marking a pattern in the semiconductor device manufacturing process to form interconnected metal lines and metal layers ...

AI Technical Summary

Problems solved by technology

During the top through-hole etching process, when the tantalum layer is etched, the tantalum layer will be charged with a large amount of charge, which will break down the capacitor structure, and a large amount of electrons will be transferred to the metal layer 5, and then along the metal layer 5, metal interconnection After line 5, metal layer 4, metal interconnect line 4, metal layer 3, metal interconnect line 3, metal layer 2, metal interconnect line 2, metal layer 1, metal interconnect line 1 and the gate, pass through the wafer The ground wire of the chuck is exported, and a large amount of heat is generated during the process, which causes the metal to melt. In addition, the high voltage released through the grid during discharge also causes the grid to break down at the same time.

This leads to the destruction of the final fabricated semiconductor

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