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Method for forming self-aligned metallic silicide

A metal silicide and metal silicide layer technology, applied in electrical components, semiconductor/solid-state device manufacturing, semiconductor devices, etc., can solve problems such as insufficient distribution, and achieve the effect of improving uniformity and avoiding bridging.

Active Publication Date: 2013-04-03
CSMC TECH FAB2 CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] However, the inventors have found that the distribution of alloy elements in the metal silicide layer (101a, 102a or 103a) formed in the prior art is not uniform enough, and the metal elements of the metal silicide layer (101a, 102a or 103a) will diffuse into the The source 101, the drain 102 or the gate 103 form a bridge phenomenon

Method used

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  • Method for forming self-aligned metallic silicide
  • Method for forming self-aligned metallic silicide
  • Method for forming self-aligned metallic silicide

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Embodiment Construction

[0032] It can be seen from the background technology that the inventors found that the distribution of alloy elements in the metal silicide layer formed in the prior art is not uniform enough, and the metal elements in the metal silicide layer will diffuse to the source, drain or gate, forming a bridge Phenomenon.

[0033] For this reason, the inventors of the present invention have provided an optimized method for forming a salicide through a large number of experiments, including:

[0034] providing a semiconductor substrate, the surface of the semiconductor substrate has at least one silicon region;

[0035] performing ion implantation on the silicon region;

[0036] removing the native oxide layer of the silicon region;

[0037] forming a metal layer on the silicon region;

[0038] forming a protective layer on the surface of the metal layer;

[0039] Annealing the semiconductor substrate formed with the metal layer to form a metal silicide layer.

[0040] In the foll...

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Abstract

The invention relates to a method for forming a self-aligned metallic silicide, comprising the following steps: providing a semiconductor substrate, wherein the surface of the semiconductor substrate is at least provided with a silicon region; carrying out ion injection on the silicon region; removing the natural oxidizing layer of the silicon region; forming a metal layer in the silicon region; forming a protective layer on the surface of the metal layer; and annealing the semiconductor substrate provided with the metal layer to form a metallic silicide layer. The metallic silicide layer formed in the invention has good uniformity and is free of bridge connection.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for forming a self-aligned metal silicide. Background technique [0002] In semiconductor manufacturing technology, metal silicide is widely used in source / drain contacts and gate contacts to reduce contact resistance due to its low resistivity and good adhesion with other materials. Metals with high melting points react with silicon to form metal silicides, and metal silicides with low resistivity can be formed through one-step or multi-step annealing process. With the improvement of the semiconductor process level, especially at the technology node of 90nm and below, in order to obtain lower contact resistance, nickel and nickel alloys have become the main materials for forming metal silicides. [0003] A method for forming a salicide is disclosed in the published Chinese patent application No. 200780015617.9, in which nickel alloy is selected as the materia...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/28H01L21/768H01L21/336
Inventor 石永昱王栩
Owner CSMC TECH FAB2 CO LTD