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Bridgman-Stockbarge method single crystal growth furnace and application thereof

A crucible descending method and a growth furnace technology are applied in the field of crucible descending method single crystal growth furnaces, which can solve the problems of unstable temperature field of the furnace, easy to touch, shortening of normal service cycle, etc. The effect of service life and reliability improvement

Active Publication Date: 2013-03-13
上海德硅凯氟光电科技有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] Aiming at the problems in the prior art that the crucible’s feeding and discharging materials easily touch the insulation layer and the heating element, so that the temperature field of the furnace body is unstable and the normal service life is shortened, the purpose of the present invention is to provide a method that can effectively avoid the crucible feeding and discharging. The crucible descending single crystal growth furnace and its application that touch the insulation layer and heating element to improve the stability, reliability and repeatability of crystal growth and reduce the cost of crystal growth

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  • Bridgman-Stockbarge method single crystal growth furnace and application thereof

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Embodiment

[0017] see figure 1 Shown: the crucible descending single crystal growth furnace of the present invention comprises a furnace body 11 and a vertical movement mechanism 13, a closed cavity 17 is provided in the furnace body 11, a crucible 12 is arranged at the upper end of the closed cavity 17, and a The furnace bottom plate 114 and the insulation layer 15 inside the furnace bottom plate 114 are provided with a central hole 16, the central hole 16 is connected with the airtight cavity 17, and the vertical moving mechanism 13 passes through the central hole 16 and moves up and down along the central axis of the furnace body 11; When the moving mechanism 13 is airtightly connected with the furnace body 11 , one end of the moving mechanism 13 protruding into the airtight cavity 17 is connected and fixed with the crucible 12 . The furnace body 11 includes an upper furnace cover 111, an upper furnace chamber 112 and a lower furnace chamber 113 from top to bottom. The body structure...

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Abstract

The invention discloses a Bridgman-Stockbarge method single crystal growth furnace. The furnace comprises a furnace body with a closed cavity, a crucible and a vertical movement mechanism, wherein a central hole is formed on a furnace bottom plate of the furnace body and an insulating layer on the inner side of the furnace bottom plate and is communicated with the closed cavity; the vertical movement mechanism passes through the central hole and moves up and down along a central shaft of the furnace body; and when the vertical movement mechanism is hermetically connected with the furnace body, one end of the vertical movement mechanism stretching into the closed cavity is positioned at the upper end of the closed cavity and is connected and fixed with the crucible. By the Bridgman-Stockbarge method single crystal growth furnace, the insulating layer and a heating body can be effectively prevented from being touched when materials are fed into the crucible and the crucible discharges materials, the instable factor of a temperature field of the furnace body is eliminated, the reliability of the single crystal growth furnace is improved, the service life of the single crystal growth furnace is prolonged, the stability, reliability and repeatability of crystal growth are effectively improved, the production cost of crystals is reduced, and the furnace is suitable for growing various crystals.

Description

technical field [0001] The invention relates to the technical field of crystal growth, and more specifically relates to a crucible drop method single crystal growth furnace and its application. Background technique [0002] Crystal materials play a vital role in the field of modern technical materials, especially in the fields of new energy, optoelectronic technology, and microelectronics. However, the growth quality and cost of crystals have become constraints on their scale development and application. The crystal growth technology mainly adopts the pulling method, the Kyropoulos method, the temperature gradient method, the guided mode method, the heat exchange method, and the crucible drop method. Combining the above-mentioned various crystal growth technologies, the crucible drop method has a stable temperature field and is easy to control. And other advantages, the internal stress of the crystal grown by the crucible drop method is small, and the stress release type fra...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B11/00
Inventor 李红军胡克艳徐军郭鑫苏良碧陈伟超钱小波唐慧丽
Owner 上海德硅凯氟光电科技有限公司