Polycrystalline silicon ingot furnace

Abstract

The invention relates to a polycrystalline silicon ingot furnace which comprises a furnace body and a bracket, wherein the furnace body is fixed on the bracket, a support plate is arranged inside the furnace body, a crucible is arranged on the support plate, a heater is arranged outside the crucible, a reflecting screen is covered outside the heater, a thermal insulating material is filled between the furnace body and the reflecting screen, the furnace body comprises an upper furnace body and a lower furnace body, a lifting device is connected between the upper furnace body and the lower furnace body, and a vacuum mouthpiece is arranged at one end of the upper furnace body. According to the polycrystalline silicon ingot furnace provided by the invention, the lifting of the lower furnace body is controlled through a lifting device, so as to conveniently place in or take out the crucible which is loaded with a polycrystalline silicon ingot and effectively protect the safety of operators; meanwhile, a graphite resistor heater with thickness gradually increased from top down is adopted, so as to increase the speed and quality for producing polycrystalline silicon cast ingots, simplify the structure of the furnace body and prolong the service life of equipment.

Description

technical field [0001] The invention relates to the field of polysilicon, in particular to a polysilicon ingot furnace. Background technique [0002] Silicon is an important electronic and optical material, which plays an important role in a wide range of fields such as information, communication, aerospace, and environmental protection, and the market demand is increasing. For example, silicon for solar cells is far from meeting the needs. At present, the sources of silicon for solar cells are: first, semiconductor polysilicon elbow materials and scraps; second, solar-grade polysilicon produced by excess production capacity of polysilicon; third, production of electronic-grade polysilicon The head and tail material, pot bottom material. [0003] At present, the polysilicon ingot furnace is mainly used to produce silicon semiconductor materials by casting ingots. The traditional polysilicon ingot furnace is composed of a furnace body and a furnace cover. Usually, the furnac...

AI Technical Summary

Problems solved by technology

For example, silicon for solar cells is far from meeting the needs. At present, the sources of silicon for solar cells are: first, semiconductor polysilicon elbow materials and scraps; second, solar-grade polysilicon produced by excess production capacity of polysilicon; third, production of electronic-grade polysilicon Head and tail materials, pot bottom materials

[0003] At present, the polysilicon ingot furnace is mainly used to produce silicon semiconductor materials by casting ingots. The traditional polysilicon ingot furnace is composed of a furnace body and a furnace cover. Usually the furnace cover is located at the upper end of the furnace body, and electric heaters are distributed around the crucible of the furnace. It is inconvenient to load and unload materials, the electric control heating and control system is placed under the charged components, the safety performance is poor, and the distribution of heat insulation in the furnace body is unreasonable, so that the melting speed of ingot polysilicon is slow and the service life of the equipment is short

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