Non-direct bond copper isolated lateral wide band gap semiconductor device
A device and a lateral technology, applied in the field of lateral wide bandgap semiconductor devices, can solve problems affecting the performance and service life of the semiconductor device 100, increasing the thermal resistance of the semiconductor device 100, etc.
Inactive Publication Date: 2011-08-03
GM GLOBAL TECH OPERATIONS LLC
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Problems solved by technology
Although the semiconductor device 100 can operate normally, the inclusion of the DBC structure 130 that electrically isolates the silicon chips 110 and 111 from the heat sink 120 unnecessarily increases the junction temperature of the semiconductor device 100 during operation, which affects the semiconductor Performance and / or lifetime of device 100
Additionally, the inclusion of an adhesion layer at interfaces 112 and 113 increases the amount of thermal resistance in semiconductor device 100
Method used
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[0047] The following detailed description of the invention is merely exemplary in nature and is not intended to limit the invention or the application and uses of the invention. Furthermore, there is no intention to be bound by any theory presented in the preceding background of the invention or the following detailed description of the invention.
[0048] figure 2 is a diagram of one embodiment of an isolated non-DBC type semiconductor device 200 . In at least the illustrated embodiment, semiconductor device 200 includes epitaxial layer 210 directly overlying buffer layer 240 , which is directly coupled to heat sink 220 . In an exemplary embodiment, the semiconductor device 200 constitutes a power module having a heat sink 200 and semiconductor elements attached to the heat sink.
[0049] In the illustrated embodiment, the epitaxial layer 210 constitutes a semiconductor chip and includes a horizontally configured switch 2110 and a diode 2120 horizontally coupled to the swi...
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Non-direct bond copper isolated lateral wide band gap semiconductor devices are provided. One semiconductor device includes a heat sink, a buffer layer directly overlying the heat sink, and an epitaxial layer formed of a group-III nitride overlying the buffer layer. Another semiconductor device includes a heat sink, a substrate directly overlying the heat sink, a buffer layer directly overlying the substrate, and an epitaxial layer formed of a group-III nitride overlying the buffer layer. Being formed of a group-III nitride enables the various epitaxial layers to be electrically isolated from their respective heat sinks.
Description
technical field [0001] The present invention relates generally to semiconductor devices, and more particularly to lateral wide bandgap semiconductor devices isolated without direct bonding to copper substrates or the like. Background technique [0002] Controlling the heat generated by semiconductor devices is a design challenge in packaging power electronics. refer to figure 1 , today's semiconductor device 100 typically has a silicon chip 110 and a separate silicon chip 111; the silicon chip 110 is a vertically structured switch 1110 (eg, with gate 1112 and source 1114 on the top layer of the device and layers below the top layer The silicon chip 111 is composed of a diode 1120 covered on the heat sink 120 . To isolate silicon chips 110 and 111 from heat sink 120 , semiconductor device 100 includes a direct bonded copper (DBC) structure 130 (or another similar structure) separating silicon chips 110 and 111 from heat sink 120 . Silicon chips 110 and 111 are attached to ...
Claims
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IPC IPC(8): H01L23/367H01L25/18
CPCH01L24/49H01L2924/10253H01L24/29H01L2224/49111H01L2224/48137H01L25/072H01L23/36H01L24/48H01L2924/14H01L2924/00014H01L2924/00H01L2224/45099H01L2224/45015H01L2924/207
Inventor G.R.伍迪T.G.沃德K.布特罗斯B.休斯
Owner GM GLOBAL TECH OPERATIONS LLC