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Preparation method of patterned substrate of LED (light-emitting diode) chip

A technology of LED chips and graphic substrates, which is applied in the field of preparation of LED chip graphic substrates, can solve the problems of high processing costs and low efficiency, and achieve the effects of low manufacturing costs, suitable for mass production, and meeting the requirements of use

Inactive Publication Date: 2013-05-15
DONGGUAN WANFENG NANOMETER MATERIALS
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  • Abstract
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  • Application Information

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Problems solved by technology

[0004] In addition to the aforementioned etching methods, some people also use laser engraving to make graphic substrates. The shortcomings of these methods are obvious, the efficiency is low, and the processing cost is too high

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  • Preparation method of patterned substrate of LED (light-emitting diode) chip
  • Preparation method of patterned substrate of LED (light-emitting diode) chip
  • Preparation method of patterned substrate of LED (light-emitting diode) chip

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Embodiment Construction

[0019] The present invention will be described in further detail below with reference to the accompanying drawings.

[0020] reference Figure 1 to Figure 4 , The first embodiment of the present invention is a method for preparing an LED chip pattern substrate, the LED chip has a ceramic substrate, and the substrate has a pattern, which is characterized by comprising the following steps: S10, making a pattern embossing roller; S20 , Provide bottom mold substrate; S30, UV oil on one side of the bottom mold substrate; S40, imprint the UV oil side of the bottom mold substrate with a pattern embossing roller, and solidify the bottom mold at the same time; S50, cut the bottom mold ; S60, provide isostatic pressing mold, put the bottom mold and ceramic powder; S70, press; S80, take out the powder and sinter. Step S10 is performed by laser engraving or etching. The substrate is a metal film, and the substrate provided in step S20 has a double-layer structure of a substrate and a relea...

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Abstract

The invention relates to a semiconductor lighting technology, in particular to a preparation method of a patterned substrate of an LED (light-emitting diode) chip. The LED chip comprises a ceramic substrate, and the substrate comprises a pattern. The preparation method is characterized by comprising the following steps: S10, producing a pattern stamping roller; S20, providing a bottom die base material; S30, coating UV (ultraviolet) oil on the single side of the bottom die base material; S40, using the pattern stamping roller to stamp the side with the UV oil of the bottom die base material, and simultaneously performing light curing for forming a bottom die; S50, cutting the bottom die; S60, providing an isostatic pressing die, and placing the bottom die and ceramic powder; S70, pressurizing; and S80, taking out the powder, and sintering. The invention provides the preparation method of the patterned substrate of the LED chip with low processing cost.

Description

Technical field [0001] The invention relates to semiconductor packaging technology, in particular to a method for preparing an LED chip pattern substrate. Background technique [0002] GaN-based light-emitting diodes are mainly heteroepitaxial on a flat substrate, where the substrate can be sapphire, silicon carbide or silicon. When light enters the substrate from the epitaxial layer, since the interface is relatively flat, the incident angle of light is relatively small, and the refractive index of gallium nitride and the substrate is not much different, leading to low reflectivity, and most of the light will escape to the substrate. It cannot be effectively reflected back to the epitaxial layer, and the light extraction efficiency is low. [0003] The current strategy to solve the above problems is mainly to use a pattern substrate, such as a method for manufacturing a sapphire pattern substrate disclosed in Chinese Patent Document CN101814426A on August 25, 2010. The specific s...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00B44C1/24
Inventor 李金明
Owner DONGGUAN WANFENG NANOMETER MATERIALS