Method for manufacturing metal wiring of semiconductor chip
A metal wiring and semiconductor technology, which is applied in the field of semiconductor chip manufacturing, can solve the problems of low precision of metal wiring patterns, high threshold for promotion and application, and incomparable dimensional accuracy of lithography patterns, so as to reduce production costs and ensure patterns. Precision, the effect of simplifying the production process
Inactive Publication Date: 2020-08-28
江苏清联光电技术研究院有限公司
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This brings a high threshold for the popularization and application of this technology.
[0005] 2. The accuracy of the metal connection pattern is not high. For the stripping process, the photoresist is generally negative, and the surface of the photoresist after exposure has to undergo some treatment, resulting in the dimensional accuracy of the photolithographic pattern is not as good as that of non-stripping Photoresist pattern for process
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[0022] The following will clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only some of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.
[0023] In order to solve a series of problems that semiconductor chips in the prior art use photoresist to make metal wiring, in the metal wiring manufacturing method of semiconductor chip provided by the present invention, a silicon nitride layer is used to form an inverted trapezoidal structure, and then A metal layer is grown on the surface of the semiconductor substrate through the inverted trapezoidal silicon nitride layer, and then a silicon dioxide dielectric layer is covered on the surface of the metal wiring,...
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Abstract
The invention provides a metal connecting line manufacturing method of a semiconductor chip. The method comprises the steps that a silicon dioxide layer is formed on the surface of a semiconductor substrate; the silicon dioxide layer is etched into silicon dioxide steps having a trapezoidal profile; a silicon nitride layer is formed on the surface of the semiconductor substrate, wherein the silicon nitride layer covers the silicon dioxide steps having the trapezoidal profile; the silicon dioxide steps are removed so as to form trapezoidal grooves on the silicon nitride layer, wherein the silicon nitride layer reserved on the surface of the semiconductor substrate has an inverted trapezoidal structure; metal layer growth is performed by using the silicon nitride layer having the inverted trapezoidal structure, wherein the metal layer arranged in the trapezoidal grooves acts as the metal connecting line of the surface of the semiconductor substrate; and a silicon dioxide dielectric layeris filled in the trapezoidal grooves, and the silicon dioxide dielectric layer covers the metal connecting line of the surface of the semiconductor substrate.
Description
【Technical field】 [0001] The invention relates to the technical field of semiconductor chip manufacturing, in particular to a method for manufacturing metal wiring of a semiconductor chip. 【Background technique】 [0002] The role of semiconductor chips in current electronic products is becoming more and more important. Metal wiring can be used to realize electrical interconnection between circuit units or circuit elements in semiconductor chips, because the production of metal wiring in semiconductor chips is very important. . For conventional semiconductor chips. Conventional metal wiring is formed by using photoresist. Specifically, photoresist is formed on the semiconductor substrate, and then the surface of the photoresist is soaked in a special solution such as toluene, so that the surface layer of the photoresist is developed. When , the solubility in the developer solution decreases, thereby forming an inverted trapezoidal photoresist morphology. Then, the photores...
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IPC IPC(8): H01L21/48
CPCH01L21/4846
Inventor 不公告发明人
Owner 江苏清联光电技术研究院有限公司