Method for preparing high-precision chromium plate mask circuit graphics
A circuit pattern and mask technology, which is applied in the field of microwave and millimeter wave circuit preparation, can solve problems such as the inability to prepare a pattern precision size mask pattern, and achieve the effect of improving the plate making process capability, ensuring pattern precision and high resolution.
Inactive Publication Date: 2017-09-22
THE 41ST INST OF CHINA ELECTRONICS TECH GRP
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Problems solved by technology
[0010] According to the deficiencies of the prior art, the present invention provides a method for preparing a high-precision chrome mask circuit pattern, which mainly solves the problem that the prior art cannot prepare a micron mask due to etching process defects. The problem of higher pattern accuracy and smaller feature size mask patterns even on the sub-micron level
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[0038] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.
[0039] Such as image 3 As shown, the method for preparing a high-precision chrome mask plate circuit pattern in this embodiment performs the following steps in sequence:
[0040]In step 301, a transparent substrate 511 is provided, and the material of the transparent substrate 511 is quartz glass with a thickness of 1.2 mm. Place the transparent substrate 511 in chromic acid and soak for 48 hours to remove organic impurities on the surface of the transparent...
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Abstract
The invention relates to the technical field of microwave and millimeter wave circuit preparation, and specifically relates to a method for preparing high-precision chromium plate mask circuit graphics. An ultraviolet reverse photoresist is introduced as a positive photoresist for use, the photoresist has a relatively high resolution ratio, and the graphic precision of the photoresist is guaranteed; the photoresist serves as a negative photoresist after reverse baking, the photoresist has relatively high etched capacity, an inverted trapezoidal table surface is formed, and the inverted trapezoidal and a mask metal layer are peeled off, so that the chromium plate mask circuit graphics with higher graphic precision, smaller feature size and 90-degree sidewall steepness can be manufactured. Accurate mask graphic transfer and good line width control can be realized in micron and submicron ranges, the mask metal layer is prevented from being peeled off to cause the problem of disconnection among the circuit graphics when the mask circuit graphics are relatively small in size, the qualified rate and graphic quality of mask are improved, and the reliability of microwave and millimeter wave circuit devices is improved.
Description
technical field [0001] The invention relates to the technical field of microwave and millimeter wave circuit preparation, in particular to a method for preparing a high-precision chrome mask plate circuit pattern. Background technique [0002] In recent years, the development of microwave and millimeter wave circuit systems has been extremely rapid, and its functions have become more and more complex, and the requirements for electrical performance indicators have become higher and higher. . The integration degree of microwave and millimeter wave circuits has a great correlation with its characteristic size, which refers to the minimum line width for microwave and millimeter wave device processing. When the area of the microwave and millimeter wave circuit is constant, the higher the integration, the stronger the function and the better the performance, but the smaller the feature size, the more difficult it is to manufacture. Therefore, the feature size that marks the m...
Claims
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IPC IPC(8): G03F1/76
CPCG03F1/76
Inventor 赵海轮曹乾涛
Owner THE 41ST INST OF CHINA ELECTRONICS TECH GRP