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High-power LED (light-emitting diode) with Schottky diode for measuring temperature

A Schottky diode, high-power technology, applied in electrical components, circuits, semiconductor devices, etc., can solve problems such as low accuracy and inability to accurately measure the temperature of the central area of ​​the LED

Inactive Publication Date: 2013-04-17
SOUTH CHINA NORMAL UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, some measuring instruments have the function of measuring LED thermal resistance, but the accuracy rate is not high. The main reason is that the temperature in the central area of ​​the LED cannot be accurately measured.

Method used

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  • High-power LED (light-emitting diode) with Schottky diode for measuring temperature
  • High-power LED (light-emitting diode) with Schottky diode for measuring temperature
  • High-power LED (light-emitting diode) with Schottky diode for measuring temperature

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Embodiment Construction

[0025] Such as Figure 1 to Figure 4 Shown is a specific implementation of the high-power LED with Schottky diode temperature measurement of the present invention. Using MOCVD technology to manufacture GaN epitaxial wafers, grow an n-type low-concentration GaN layer 10, an n-type high-concentration GaN layer 9, an InGaN / GaN quantum well layer 8, and a p-type GaN layer 7 sequentially on a sapphire substrate 11, that is, an epitaxial wafer is manufactured. Chip, and then use the planar process technology to design the size of the epitaxial wafer of high-power LED to be 1.5mm×1.5mm, design the pn junction preparation area in the center of the chip to be Φ0.3mm, etch the blind hole 4 by ion etching method, As deep as the n-type low-concentration GaN layer 10, the negative electrode 2 of the Schottky diode and the positive electrode 102 of the Schottky diode are prepared on the n-type low-concentration GaN layer 10 by using an electron evaporation method, and the positive electrode...

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Abstract

The invention discloses a high-power LED (light-emitting diode) with a Schottky diode for measuring the temperature. The high-power LED is characterized in that the central area of the high-power LED is provided with a Schottky diode. According to the invention, the Schottky diode for measuring the temperature is prepared on the basis of the self characteristic of the high-power LED, and when theLED works normally, the temperature of the LED can be measured in real time, therefore, the Schottky diode is very important for the application of the high-power LED and can monitor the real-time working temperature of a product applying the LED in real time.

Description

technical field [0001] The invention belongs to the technical fields of semiconductors, optics, etc., and in particular relates to a high-power LED for temperature measurement using a Schottky diode. Background technique [0002] LED technology has become increasingly mature, especially the application technology of LED is more widely used, but its application technology needs to be further studied, and its heat dissipation technology and other problems need to be solved. One of the most important technologies is to measure the thermal resistance of LED. Through By analyzing the temperature characteristics of the LED device, the influence of its temperature on the device can be analyzed. To accurately measure the LED thermal resistance, the first problem is how to accurately measure the temperature of the central area of ​​the LED. At present, some measuring instruments have the function of measuring LED thermal resistance, but the accuracy rate is not high. The main reason...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00H01L29/872
Inventor 孙慧卿郭志友解晓宇王度阳韩世洋许轶严卫聪黄鸿勇
Owner SOUTH CHINA NORMAL UNIVERSITY
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