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Heat treatment apparatus and method of manufacturing semiconductor device

A heat treatment device, side technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as leakage of gas, inability to implement process regulations, incomplete sealing, etc., to achieve high safety effects

Active Publication Date: 2011-09-21
KOKUSAI DENKI KK
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] However, even if this sealing is implemented, it is not a complete seal, so there will be a lot of gas leakage from the reaction furnace and the intrusion of external air to the outside of the reaction furnace.
Therefore, there is a problem that the desired process regulation cannot be implemented, and the risk is high.

Method used

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  • Heat treatment apparatus and method of manufacturing semiconductor device
  • Heat treatment apparatus and method of manufacturing semiconductor device
  • Heat treatment apparatus and method of manufacturing semiconductor device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0103] Using the heat treatment apparatus of the above-mentioned embodiment, the exhaust velocity of the exhaust device 301 was kept constant, and the temperature around the contact portion between the reaction tube 42 and the manifold 44 was measured under the following processing conditions in which the temperature of the processing chamber 201 was changed. of heat effects. As a result, the following temperature measurement results were obtained.

[0104] Processing conditions: the temperature in the processing chamber 201 (substrate processing temperature) is 1000° C., the set frequency of the exhaust device 301 (blower) is 30 Hz,

[0105] The measured value of the temperature around the contact portion between the reaction tube 42 and the manifold 44 is 124°C,

[0106] Processing conditions: the temperature in the processing chamber 201 (substrate processing temperature) is 1100° C., the set frequency of the exhaust device 301 (blower) is 30 Hz,

[0107] The measured val...

Embodiment 2

[0114] Using the heat treatment apparatus of the above-mentioned embodiment, the temperature of the treatment chamber 201 was kept constant, and the temperature around the contact portion between the reaction tube 42 and the manifold 44 was measured under the following treatment conditions in which the exhaust velocity of the exhaust device 301 was changed. heat-affected conditions. The following temperature measurement results were obtained.

[0115] 1) Processing conditions: the temperature in the processing chamber 201 (substrate processing temperature) is 1250° C., the set frequency of the exhaust device 301 (blower) is 20 Hz,

[0116] The measured temperature value around the contact portion between the reaction tube 42 and the manifold 44 is 237°C,

[0117] Processing conditions: the temperature in the processing chamber 201 (substrate processing temperature) is 1250° C., the set frequency of the exhaust device 301 (blower) is 30 Hz,

[0118] Measured temperature value...

Embodiment 3

[0123] Using the heat treatment apparatus of the above-described embodiment, the temperature of the processing chamber 201 was kept constant, and the center of the gap 506 between the reaction tube 42 and the manifold 44 was measured under the following processing conditions in which the exhaust rate of the exhaust device 301 was changed. The surrounding height, that is, the thermal influence of multiple positions of the exhaust port 5021 in the circumferential direction of the reaction tube 42 . The following temperature measurement results were obtained.

[0124] 1) Processing conditions: the temperature in the processing chamber 201 (substrate processing temperature) is 1200° C., the set frequency of the exhaust device 301 (blower) is 20 Hz,

[0125] The measured temperature value at a position separated by about 90° from the exhaust port 5021 in the circumferential direction of the reaction tube 42, 450°C,

[0126] The measured temperature value at a position about 180° a...

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PUM

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Abstract

A heat treatment apparatus capable of achieving high-accuracy processing and high safety and a method of manufacturing a substrate are provided. The heat treatment apparatus 10 includes a reaction tube 42 for processing a substrate, a manifold 44 for supporting the reaction tube 42, a heater 46 installed around the reaction tube 42 to heat an inner part of the reaction tube 42, a circumferential portion 500 installed to surround a side portion of the reaction tube 42 arranged in a lower portion than the heater 46; an exhaust device 301 for forcibly exhausting a gap 506 between the circumferential portion 500 and the reaction tube 42; and a sealing member 150 installed in a contacting portion between the reaction tube 42 and the manifold 44. Here, an inlet port 501 through which the exhaust device inhales an atmosphere outside the circumferential portion 500 to the gap 506 is installed in the circumferential portion 500.

Description

technical field [0001] The present invention relates to a heat treatment apparatus for manufacturing a substrate such as a semiconductor wafer or glass, and a method for manufacturing a semiconductor device. Background technique [0002] Conventionally, a vertical heat treatment apparatus has been widely used as a heat treatment apparatus for heat treating a substrate. This conventional vertical heat treatment apparatus has a reaction furnace. When wafers are processed in the reaction furnace, a predetermined process protocol is carried out by heating to a predetermined temperature under the gas atmosphere introduced into the sealed reaction furnace. [0003] The environment (purity of gas) of the reaction furnace at this time is important. Usually, the reaction furnace (inside the reaction tube) is controlled to have a negative pressure relative to the outside of the furnace (atmosphere). In this case, for example, when a leak (gas leak) occurs at the sealing portion (ab...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/00H01L21/02H01L21/67
CPCH01L21/67109H01L21/22H01L21/324H01L21/31
Inventor 山崎惠信林田晃上野正昭泉学野上克明
Owner KOKUSAI DENKI KK
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