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Integrated circuit and a method for producing the same

A technology for integrated circuits and dielectric layers, which is applied in the field of integrated circuits and the manufacture of integrated circuits, and can solve complex problems such as IC processing and manufacturing

Active Publication Date: 2011-09-21
先进制造创新公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, these technological evolutions also make IC processing and manufacturing more complex. In order to realize these technological innovations, IC processing and manufacturing also need to be continuously innovated.

Method used

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  • Integrated circuit and a method for producing the same
  • Integrated circuit and a method for producing the same
  • Integrated circuit and a method for producing the same

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Embodiment Construction

[0055] As mentioned above, the trend in the semiconductor industry is toward miniaturization or reduction in the size of integrated circuits in order to provide smaller ICs and improve performance (eg, increase speed and reduce power consumption). It has been proposed to use low-k dielectrics to reduce the parasitic capacitance between metal lines and / or metal layers. The parasitic capacitance delays the resistance-capacitance (RC) time, thus slowing down the operation speed of the integrated circuit.

[0056] The following disclosure provides a number of different implementations or examples. To simplify the disclosure, only examples of specific components and configurations are provided below, and of course, the present invention is not limited to these examples. In addition, the same reference symbols and / or letters may be reused in each instance. The purpose of these repetitions is only to express the various implementations or configurations discussed in a concise and c...

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PUM

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Abstract

The invention provides an integrated circuit and a method for producing the same. The integrated circuit includes an interconnect structure at least partially disposed in at least one opening of a dielectric layer that is disposed over a substrate. At least one air gap is disposed between the dielectric layer and the interconnect structure. At least one first liner material is disposed under the at least one air gap. At least one second liner material is disposed around the interconnect structure. The at least one first liner material is disposed between the dielectric layer and at least one second liner material.

Description

technical field [0001] The present invention relates generally to the field of semiconductor devices, and more particularly to integrated circuits including air gaps around interconnect structures, and methods of fabricating such integrated circuits. Background technique [0002] The semiconductor integrated circuit (IC) industry has been enjoying rapid growth. With the advancement of related technologies in IC materials and design, multiple generations of ICs have also been produced, and each generation of ICs is smaller and more complex than the previous generation of ICs. However, these technological evolutions also make IC processing and manufacturing more complex. In order to realize these technological innovations, continuous innovations in IC processing and manufacturing are also required. [0003] Over the history of IC evolution, functional density (ie, the number of interconnected components per chip area) has shrunk along with geometry size (ie, the smallest comp...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/522H01L21/768
CPCH01L23/5384H01L2924/0002H01L2224/16225H01L23/522H01L21/768H01L21/7682H01L21/76831H01L2221/1063H01L21/76802H01L21/76877
Inventor 陈启平陈志壕
Owner 先进制造创新公司