Short-circuit deembedding test structure for micro-capacitance MOS (Metal Oxide Semiconductor) varactor and variode

Abstract

The invention discloses a short-circuit deembedding test structure for a micro-capacitance MOS (Metal Oxide Semiconductor) varactor and a variode. The short-circuit deembedding test structure comprises a plurality of metal layers; the plurality of metal layers comprise a top metal layer, a first metal layer under the top metal layer and at least one intermediate metal layer, wherein the first metal layer comprises a loop; the top metal layer is divided into four regions which are not mutually connected; the intermediate metal layer comprises intermediate metal layer segments in signal port intermediate metal layer regions and a grounding port intermediate metal layer region; the intermediate metal layer segment in the first signal port intermediate metal layer region, which is nearest to the loop of the first metal layer, is communicated with the intermediate metal layer segment in the second signal port intermediate metal layer region; the first signal port intermediate metal layer region is connected with the loop of the first metal layer; and the second signal port intermediate metal layer region and the loop of the first metal layer are disconnected. According to the structuredisclosed by the invention, the parasitic resistance can be effectively eliminated, and the consistency between test structure parameters and actual circuit parameters is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a short-circuit de-embedding test structure of a microcapacitance MOS varactor and a varactor. Background technique [0002] Metal oxide semiconductor (MetalOxide Semiconductor, hereinafter referred to as: MOS) varactors and varactor diodes are components whose capacitance varies with voltage, and are radio frequency and mixed signal (mix-signal) circuits, especially voltage controlled oscillators (Voltage Controlled Oscillator, hereinafter referred to as: VCO) is an important component in the circuit. With the development of integrated circuits, the driving frequency of some circuits has exceeded 3GHz. For example, in high-speed circuits, the VCO circuit that generates the clock signal needs to use a minimum capacitance value less than or equal to 100fF (10 -10 F) microcapacitance MOS varactor or varactor diode. [0003] In order to obtain various parameters of the circ...

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Problems solved by technology

[0013] In order to solve the problem that the short-circuit de-embedding test structure of the micro-capacitance MOS varactor and varactor diode cannot completely remove the parasitic resistance, and improve the consistency between the parameters of the short-circuit test structure and the actual circuit parameters, the present invention provides a micro-capacitance MOS A short-circuit de-embedding test structure of a varactor and a varactor diode, the short-circuit de-embedding test structure includes: a plurality of metal layers,

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