Polysilicon reduction furnace with concave mirror surfaces on inner wall and concave mirror surfaces for polysilicon reduction furnace

Abstract

The invention discloses a polysilicon reduction furnace with concave mirror surfaces on an inner wall and the concave mirror surfaces for the polysilicon reduction furnace. The reduction furnace is characterized in that the concave mirror surfaces with a high polishing degree are installed on the inner wall of the reduction furnace; various concave mirror surfaces are tightly adjacent in turn andare fixed on the inner wall of the furnace body through bolts; the number of the installed mirror surfaces is equal to that of silicon rods at the outermost ring inside the furnace, the mirror surfaces are in one-to-one correspondence with the silicon rods at the outermost ring, and the axis of the concave surface of the mirror surface is coincided with the axis of the silicon rod corresponding to the mirror surface. Through the concave mirror surfaces with the high polishing degree, the energy which is radiated to the inner wall of the furnace body by virtue of the high temperature silicon rod is reflected back to the inside of the furnace, and the reflected energy is focused on the silicon rod, thus by using a photospot technique, the energy loss caused by the high temperature radiationof the silicon rod is further reduced on the basis of polishing the inner wall of the furnace body, and a complicated process that multi-polishing is carried out on the inner wall of the furnace bodyis avoided, thereby greatly reducing the production cost of the polysilicon reduction furnace.

Description

technical field [0001] The invention relates to the technical field of polysilicon production, in particular to a polysilicon reduction furnace and a concave mirror for the polysilicon reduction furnace. Background technique [0002] At present, the production of polysilicon mainly adopts the improved Siemens method. In the improved Siemens method, the main reaction in the reduction section is the reduction of trichlorosilane by hydrogen to generate silicon and hydrogen chloride, which is carried out in a polysilicon reduction furnace. When the reaction occurs, the polysilicon reduction furnace is in a state of electrification and high temperature, and the reaction temperature is maintained at about 1050-1150 ° C. At the same time, the furnace body jacket, chassis and electrodes of the reduction furnace are equipped with a circulating cooling water system to keep in contact with the high temperature environment in the furnace. Heat exchange is performed to meet the temperat...

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This will increase the complexity of production operations and increase production costs

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