Method for preparing nitrogen-doped P-type zinc oxide film in one step by using nitrogen as doping source

A technology of zinc oxide film and nitrogen doping, which is applied in ion implantation plating, metal material coating process, coating, etc., can solve the problems of increasing film complexity and controllable parameters, and achieve the goal of reducing related temperature parameters control, good film quality and good resistivity

Inactive Publication Date: 2011-10-12
(CNBM) BENGBU DESIGN & RES INST FOR GLASS IND CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This increases the complexity of preparing thin

Method used

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  • Method for preparing nitrogen-doped P-type zinc oxide film in one step by using nitrogen as doping source
  • Method for preparing nitrogen-doped P-type zinc oxide film in one step by using nitrogen as doping source
  • Method for preparing nitrogen-doped P-type zinc oxide film in one step by using nitrogen as doping source

Examples

Experimental program
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Embodiment 1

[0024] Example 1: Zinc oxide with a purity of 99.99% is used as the sputtering target, and glass is used as the substrate material. First, the substrate material is ultrasonically cleaned with acetone, alcohol, and deionized water according to conventional methods to remove surface grease. and dirt, and then dry it with hot air, and then put it into the magnetron sputtering chamber, when the vacuum degree in the sputtering chamber reaches 1.0*10 -4 At Pa, the sputtering gas argon is introduced to make it glow, and then the reaction gases oxygen and nitrogen are introduced, so that the ratio of the standard milliliters / minute (sccm) of argon, oxygen and nitrogen is 15:6: 9. At the same time, apply a bias voltage of -120V to the substrate to keep the working pressure at 0.6Pa, and the power is 120W. After sputtering for 40min, a nitrogen-doped zinc oxide film is directly obtained. Both the Hall effect and fluorescence spectra show that the film is P-type zinc oxide, and its resi...

Embodiment 2

[0025] Example 2: Zinc oxide with a purity of 99.99% is used as the sputtering target, and glass is used as the substrate material. First, the substrate material is ultrasonically cleaned with acetone, alcohol, and deionized water according to conventional methods to remove surface grease. and dirt, and then dry it with hot air, and then put it into the magnetron sputtering chamber, when the vacuum degree in the sputtering chamber reaches 1.0*10 -4 At Pa, the sputtering gas argon is introduced to make it glow, and then the reaction gases oxygen and nitrogen are introduced, so that the ratio of the standard milliliters / minute (sccm) of argon, oxygen and nitrogen is 14:7: 8. At the same time, apply a bias voltage of -80V to the substrate to keep the working pressure at 0.2Pa, and the power is 200W. After sputtering for 30min, a nitrogen-doped P-type zinc oxide film is directly obtained. Both Hall effect and fluorescence spectra show that the film is P-type zinc oxide, and its re...

Embodiment 3

[0026] Example 3: Zinc oxide with a purity of 99.99% is used as the sputtering target, and glass is used as the substrate material. First, the substrate material is ultrasonically cleaned with acetone, alcohol, and deionized water according to conventional methods to remove surface grease. and dirt, and then dry it with hot air, and then put it into the magnetron sputtering chamber, when the vacuum degree in the sputtering chamber reaches 1.0*10 -4 At Pa, the sputtering gas argon is introduced to make it glow, and then the reaction gases oxygen and nitrogen are introduced, so that the standard ml / min (sccm) ratio of argon, oxygen and nitrogen is 16:5: 10. At the same time, apply a bias voltage of -200V to the substrate to keep the working pressure at 1.0Pa, and the power is 80W. After sputtering for 60 minutes, a nitrogen-doped zinc oxide film is directly obtained. Both the Hall effect and fluorescence spectra show that the film is P-type zinc oxide, and its resistivity is 6.7...

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Abstract

The invention relates to a method for preparing a nitrogen-doped P-type zinc oxide film in one step by using nitrogen as a direct doping source, namely a magnetron sputtering method. In the magnetron sputtering process, metallic zinc is used as a target, argon is used as a sputtering gas, and oxygen and nitrogen are used as reaction gases; when the vacuum degree of a magnetron sputtering chamber reaches 10<-4>Pa, argon, oxygen and nitrogen in a certain ratio are introduced; and in the magnetron sputtering plating process, magnetron sputtering plating is performed under the condition that working air pressure, sputtering powder, substrate bias and plating time are kept at certain values, subsequent thermal treatment is not needed, and the nitrogen-doped P-type zinc oxide film is obtained by a direct one-step method. By the method, the nitrogen source doping problem of the zinc oxide film prepared in the prior art and complexity in thermal treatment needed after plating are solved, and control of related parameters of the thermal treatment is reduced. The method is simple; and because the nitrogen is used as the direct doping source, the reliabilities of the gases and the working parameters are strong, the quality of the film is good, and the resistivity can be well controlled in a certain range. Moreover, the P-type zinc oxide film is prepared by the one-step method.

Description

technical field [0001] The invention relates to a one-step method for preparing a P-type zinc oxide thin film using nitrogen as a direct doping source, and belongs to the technical field of semiconductor thin films and devices. Background technique [0002] ZnO thin film is a wide bandgap semiconductor material with direct band gap, which has excellent piezoelectric, gas-sensing properties and high chemical stability, so it is widely used in flat-panel displays, solar cells, LDs, LEDs and other optoelectronic components. a wide range of applications. Zinc oxide is naturally n-type doped due to its defects. However, the key to preparing devices is to obtain P-type zinc oxide with high hole concentration and resistivity within a certain range. At the same time, due to the self-compensation effect of high electron concentration in the zinc oxide film and the low acceptor concentration, the preparation of P-type films is quite difficult. To prepare high-quality P-type ZnO, it ...

Claims

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Application Information

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IPC IPC(8): C23C14/35C23C14/08
Inventor 彭寿王芸彭程沈洪雪
Owner (CNBM) BENGBU DESIGN & RES INST FOR GLASS IND CO LTD
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