Method for extracting and verifying latter interconnection delay model

A technology of delay model and verification method, which is applied in the field of extraction and verification of the delay model of the back-channel interconnection, can solve the problems of large calculation time and memory consumption, and achieves high parameter extraction accuracy, high speed, and easy extraction and verification methods. Effect

Inactive Publication Date: 2011-10-19
EAST CHINA NORMAL UNIVERSITY +1
View PDF2 Cites 9 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] Obviously, using a real 3D model and calculating the capacitance is the most direct way to achieve higher accuracy, but for a complex 3D str

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for extracting and verifying latter interconnection delay model
  • Method for extracting and verifying latter interconnection delay model
  • Method for extracting and verifying latter interconnection delay model

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0033] The present invention will be further elaborated below in conjunction with the accompanying drawings and examples. The following examples do not limit the invention. Without departing from the spirit and scope of the inventive concept, changes and advantages that can be imagined by those skilled in the art are all included in the present invention.

[0034] like figure 1 As shown, the method for extracting and verifying the back-channel interconnection delay model in this embodiment includes the following steps:

[0035] Step 1: Design a discrete interconnection test structure and a circuit-level interconnection test structure based on accurate integrated circuit process information. Among them, the integrated circuit process information includes the process conditions and process parameters adopted, such as the thickness of the electrical gate oxide E OT , channel doping concentration N CH and junction depth X j .

[0036] Wherein, the discrete interconnection te...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention provides a method for extracting and verifying a latter interconnection delay model. The method comprises the steps of: designing a discrete interconnection testing structure and a circuit level interconnection testing structure according to the process information of an integrated circuit; carrying out an interconnection delay parameter test; extracting the three-dimensional model parameters of the discrete interconnection testing structure by using a three-dimensional parasitic parameter extracting software, and calibrating the extracting results of the wafer testing result three-dimensional parameter extracting software; calibrating a simulation result of the three-dimensional parameter extracting software through the extracting result of a quasi-three-dimensional parameter extracting software; and finally, extracting the parameters of the whole circuit layout by using the quasi-three-dimensional parameter extracting software so that the precision of the extracted parameters can be compatible with the calculating speed of the parameters. The invention integrates the advantages of high precision of the three-dimensional parameter extracting software and higher calculation speed and fewer resource consumption of the quasi-three-dimensional parameter extracting software.

Description

technical field [0001] The invention relates to the technical field of integrated circuit technology, in particular to a method for extracting and verifying a back-channel interconnection delay model. Background technique [0002] With the development of integrated circuit technology, the operating frequency of the circuit is getting higher and higher, the feature size of the integrated circuit is continuously reduced, the device delay is also reduced, and the interconnection resistance is increased, the lateral capacitance of the interconnection layer and the edge As the capacitance increases, the delay of the interconnect line starts to play a major role, and the interconnect capacitance determines the total gate load. The data show that under the condition of 0.25μm process and 5-6 layer wiring technology, the interconnection delay accounts for about 60% of the total delay, so the interconnection parasitic effect in the circuit is more and more important to the impact of ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): G06F17/50
Inventor 石艳玲李曦周卉任铮胡少坚陈寿面
Owner EAST CHINA NORMAL UNIVERSITY
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products