Method for manufacturing CMOS (complementary metal-oxide-semiconductor transistor) image sensor

Abstract

The invention relates to a method for manufacturing a CMOS (complementary metal-oxide-semiconductor transistor) image sensor, wherein the method comprises the steps of: forming a photodiode with a common structure; and controlling an ion injecting angle, carrying out a plurality of times of ion injection on set areas of the photodiode, wherein the areas subjected to the plurality of times of ion injection are partially overlapped, so that at least one trench is formed among the set areas of the photodiode and the trench comprises areas with maximal doping concentration in transverse directions of the photodiode vertical to an axial direction. In the method for manufacturing the CMOS image sensor, the plurality of times of ion injection are carried out on the photodiode and the ion injecting angle is adjusted, thus the trench with the doping concentration greater than of that of the other areas of the photodiode is formed in the photodiode; and the trench comprises the areas with the maximal doping concentration, so that photoelectrons are effectively driven to move, the quantity of the delayed photoelectrons is reduced, the transfer efficiency of the photodiode is improved, and the phenomenon of image delay or information loss is reduced.

Description

technical field [0001] The invention relates to a semiconductor manufacturing process, and in particular to a manufacturing method of a CMOS image sensor. Background technique [0002] The image sensor is an important part of the digital camera. According to different devices, it can be divided into charge-coupled devices (CCD) and complementary metal-oxide semiconductor (CMOS) devices. [0003] Among them, the charge-coupled device (CCD) was developed earlier, and it is often used in high-end technical components of photography and imaging due to its high sensitivity, high resolution and excellent noise control performance. Although CCD has good performance, due to its large size, high power consumption, and incompatibility with the more common standard process in current semiconductor manufacturing technology, its production cost remains high and product compatibility poor. [0004] The CMOS image sensor does not have the inherent defects in the above-mentioned CCD techn...

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Problems solved by technology

[0010] The invention provides a method for manufacturing a CMOS image sensor, which improves the ability of a photodiode to collect photoelectrons, and transfers the collected photoelectrons more effectively, thereby alleviating or even solving the problems of CMOS image sensor image delay and the like

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