42results about How to "Reduce image lag" patented technology

A radiation image pickup apparatus which selectively executes a first reading operation driving a detection unit irradiated with the radiation to read a first signal value, a second reading operation driving the detection unit without being irradiated with any radiations before the first reading operation to read a second signal value, and a third reading operation driving the detection unit without being irradiated with any radiations after the first reading operation to read a third signal value, and subtracts a signal value produced by the processing of the second signal value and the third signal value from the first signal value, thereby reducing an offset component and random noises without lowering a frame rate and its control method are provided.

A complementary metal-oxide semiconductor (CMOS) active pixel sensor includes a photodiode, a transfer transistor with a coupled gate, a reset transistor and a signal transfer circuit, where the photodiode generates electric charges in response to incident light, the transfer transistor transfers the electric charges integrated in the photodiode to a floating diffusion node, wherein the transfer transistor has a first transfer gate and a second transfer gate, and the first and second transfer gates have a coupled gate structure, the reset transistor resets a potential level of the floating diffusion node by a given voltage level, the signal transfer circuit transfers the potential level of the floating diffusion node to an internal circuit in response to a selection signal, and the CMOS active pixel sensor with the coupled gate may increase a capacity of the photodiode and reduce an image lag by using a voltage coupling effect of the coupled gate.

A radiation image pickup apparatus which selectively executes a first reading operation driving a detection unit irradiated with the radiation to read a first signal value, a second reading operation driving the detection unit without being irradiated with any radiations before the first reading operation to read a second signal value, and a third reading operation driving the detection unit without being irradiated with any radiations after the first reading operation to read a third signal value, and subtracts a signal value produced by the processing of the second signal value and the third signal value from the first signal value, thereby reducing an offset component and random noises without lowering a frame rate and its control method are provided.

A tensile-stress-generating structure is formed above a gate electrode in a CMOS image sensor to apply a normal tensile stress between a charge collection well of a photodiode, which is also a source region of a transfer transistor, and a floating drain in the direction connecting the source region and the floating drain. The tensile stress lowers the potential barrier between the source region and the body of the transfer transistor to effect a faster and more through transfer of the electrical charges in the source region to the floating drain. Image lag is thus reduced in the CMOS image sensor. Further, charge capacity of the source region is also enhanced due to the normal tensile stress applied to the source region.

An improved CMOS sensor integrated circuit is disclosed, along with methods of making the circuit and computer readable descriptions of the circuit.

An image sensor and manufacturing method thereof are provided. The image sensor can include a gate on a semiconductor substrate, first and second p-type doping areas below the gate, a third p-type doping area adjacent to the first p-type doping area, and a fourth p-type doping area adjacent to the third p-type doping area. An n-type doping area can be provided in the semiconductor substrate such that at least a portion of the n-type doping area is disposed below the first, third, and fourth p-type doping areas. A floating diffusion area can be provided adjacent to the second p-type doping area. The invention can prevent the electrons of the channel area from flowing back toward the photodiode, so that noise and image lagging can be reduced.

A CMOS image sensor includes a semiconductor substrate; a pinned photodiode formed in a light-sensing region of the semiconductor substrate, the pinned photodiode comprising a charge-accumulating diffusion region and a surface pinning diffusion region overlying the charge-accumulating diffusion region; a transfer transistor, wherein the transfer transistor has a transfer gate comprising a protruding first gate segment with a first gate dimension and a second gate segment with a second gate dimension that is smaller than the first gate dimension. A first overlapping portion between the protruding first gate segment and the charge-accumulating diffusion region is greater than a second overlapping portion between the second gate segment and the charge-accumulating diffusion region.

The invention discloses a method and device for shortening image delay. The method comprises steps of setting a size of a frame buffer area of a system according to a size of a device display screen, obtaining a first buffer part and a second buffer part which have same sizes with size of the display screen, using a display driver of the system to alternatively read the first buffer part and the second buffer part according to a frame synchronization signal in order to obtain a current frame image and refresh the current frame image onto the display screen, and using the display driver of the system to transmit notification information to applications of the system and making the application synchronically draw the image of the next frame into a buffer part different from the buffer part that the display driver reads currently. The method and the device arrange the first buffer part and the second buffer part, so that the display driver can alternatively display contents of the two buffer parts, and the application can directly draw the image into the two buffer parts so as to shorten delay of the image from rendering to display and optimize user experience.

Example embodiments disclose an image sensor capable of preventing or reducing image lag and a method of manufacturing the same. Example methods may include forming a gate insulating film and a gate conductive film doped with a first-conductive-type dopant on a semiconductor substrate; forming a transfer gate pattern by patterning the gate insulating film and the gate conductive film; and fabricating a transfer gate electrode by forming a first-conductive-type photodiode in the semiconductor substrate adjacent to one region of the transfer gate pattern, by forming a second-conductive-type photodiode on the first-conductive-type photodiode, and by forming a first-conductive-type floating diffusion region in the semiconductor substrate adjacent to the other region of the transfer gate pattern.

An improved CMOS sensor integrated circuit is disclosed, along with methods of making the circuit and computer readable descriptions of the circuit.

A photo sensor exhibiting low noise, low smear, low dark current and high dynamic range consists of a pinned (or buried) photodiode (PPD) with associated transfer gate (TG), a reset circuit (3) and a device (SL) with sub-linear voltage-to-current characteristic. The exposure cycle is started by reverse biasing the buried photodiode to its pinning potential and by setting the transfer gate (TG) to a non-zero skimming potential. Photo-generated charge carriers start to fill the buried photodiode; if illumination intensity is high, excessive photocharges are flowing over the transfer gate (TG) to the sensing node. Because of the sub-linear device (SL) connected to the sensing node, the voltage at the sensing node is a sub-linear function of the illumination intensity, and hence the dynamic range of the pixel is increased. The voltage at the sensing node (Se) is read four times, namely before exposure, with the spilled-over photocharge, after reset, and after the photocharge in the buried photodiode has been transferred to the sensing node. This allows correlated multiple sampling techniques to be employed for eliminating reset noise. Because of its compact size, the photo sensor can be employed in one- and two-dimensional image sensors fabricated with industry-standard CMOS or CCD technologies.

An imaging system includes an image sensor and a mechanical shutter which controls the termination of exposure of the image sensor. The image sensor includes a pixel array in which a plurality of pixels are arrayed in a matrix, and a vertical scanning unit which scans the pixel array for each row. The vertical scanning unit executes in parallel some of the reset operations of pixels on at least two adjacent rows of the pixel array. The charge accumulation operation of pixels starts upon completion of the reset operation and terminates in response to light shielding by the mechanical shutter.

A system and method for reducing image lag in a complementary metal oxide semiconductor (CMOS) photodetector is disclosed. In one embodiment, the invention is a a method for reducing image lag in an array of complementary metal oxide semiconductor (CMOS) photodetectors by forward biasing the photodetectors during a first time period to charge charge traps in the photodetectors, and reverse biasing the photodetectors during a second time period to remove charge from the photodetectors except the charge trapped in the charge traps.

A photoelectric conversion device includes a photoelectric conversion portion in a silicon layer having a light-receiving surface. The silicon layer includes a P-type impurity region including a base portion having an atomic boron concentration Ba that is the highest of the portions opposite the light-receiving surface with respect to a charge accumulation region and an atomic oxygen concentration Oa, and a deep portion located opposite the charge accumulation region in the depth direction with respect to the base portion and having an atomic boron concentration Bb and an atomic oxygen concentration Ob. The impurity region satisfies Ba×Oa2<Bb×Ob2.

An imaging system includes an image sensor and a mechanical shutter which controls the termination of exposure of the image sensor. The image sensor includes a pixel array in which a plurality of pixels are arrayed in a matrix, and a vertical scanning unit which scans the pixel array for each row. The vertical scanning unit parallelly executes some of the reset operations of pixels on at least two adjacent rows of the pixel array. The charge accumulation operation of pixels starts upon completion of the reset operation and terminates in response to light shielding by the mechanical shutter.

A complementary metal-oxide semiconductor (CMOS) active pixel sensor includes a photodiode, a transfer transistor with a coupled gate, a reset transistor and a signal transfer circuit, where the photodiode generates electric charges in response to incident light, the transfer transistor transfers the electric charges integrated in the photodiode to a floating diffusion node, wherein the transfer transistor has a first transfer gate and a second transfer gate, and the first and second transfer gates have a coupled gate structure, the reset transistor resets a potential level of the floating diffusion node by a given voltage level, the signal transfer circuit transfers the potential level of the floating diffusion node to an internal circuit in response to a selection signal, and the CMOS active pixel sensor with the coupled gate may increase a capacity of the photodiode and reduce an image lag by using a voltage coupling effect of the coupled gate.

An image sensor is provided incorporating a first conductive type semiconductor substrate including an active area defined by a device isolation layer; a second conductive type first ion implant area formed as multiple regions in the active area; a second conductive type second ion implant area connecting the multiple regions of the second conductive type first ion implant area; and a first conductive type ion implant area formed on the second conductive type second ion implant area. The multiple regions of the second conductive type first ion implant area can be formed deeply in the substrate. The second conductive type second ion implant can be formed in the substrate at an upper region of the first ion implant area, a middle region of the first ion implant area, or a lower region of the first ion implant area.

An X-ray detection device includes an X-ray detection panel having a plurality of gate-lines, a plurality of data-lines, a plurality of bias-lines, a plurality of pixel circuits, a gate driving circuit that sequentially provides a gate signal to the pixel circuits via the gate-lines when an X-ray detecting operation is performed, a readout integrated circuit that performs a readout operation of a detection signal that is output from the pixel circuits via the data-lines when the X-ray detecting operation is performed, a bias driving circuit that provides a forward-bias voltage or a reverse-bias voltage to the pixel circuits via the bias-lines, and an operation control circuit that controls a forward-biasing operation and an initializing operation to be simultaneously performed on the pixel circuits.

Image latency is reduced in a video display system where an image is displayed for a stroke video frame period. The system has a display device and a plurality of memory buffers, each of which is adapted to receive image data (in a receiving condition) or to display data to the display device (in a display condition). The stroke video frame period is divided into at least two time periods and the number of memory buffers provided is at least the number of time periods per stroke video frame period. One of the memory buffers is in the display condition for a first time period, with the remaining memory buffers in the receiving condition. At the end of the time period, the memory buffers are rotated so that the displayed memory buffer moves to the receiving condition and one of the receiving buffers moves into the display condition.

The invention relates to the technical field of vehicle driving assistance, in particular to an advanced driving-assistance function upgrading system. The advanced driving-assistance function upgrading system comprises a vehicle signal interface, a data conversion module, a central processing module, an advanced driving assistance function interface, a field-programmable gate array picture processing module, a display screen video interface, and a vehicle main engine video interface. By using the high-speed central processing module and the field-programmable gate array picture processing module to conduct quick analysis processing on CAN bus data and picture-text signals and picture signals respectively, the picture delay can be effectively lowered, picture jamming, stopping and flickering are relieved, and the user experience is improved.

The invention relates to a method for manufacturing a CMOS (complementary metal-oxide-semiconductor transistor) image sensor, wherein the method comprises the steps of: forming a photodiode with a common structure; and controlling an ion injecting angle, carrying out a plurality of times of ion injection on set areas of the photodiode, wherein the areas subjected to the plurality of times of ion injection are partially overlapped, so that at least one trench is formed among the set areas of the photodiode and the trench comprises areas with maximal doping concentration in transverse directions of the photodiode vertical to an axial direction. In the method for manufacturing the CMOS image sensor, the plurality of times of ion injection are carried out on the photodiode and the ion injecting angle is adjusted, thus the trench with the doping concentration greater than of that of the other areas of the photodiode is formed in the photodiode; and the trench comprises the areas with the maximal doping concentration, so that photoelectrons are effectively driven to move, the quantity of the delayed photoelectrons is reduced, the transfer efficiency of the photodiode is improved, and the phenomenon of image delay or information loss is reduced.

The invention belongs to the technical field of display and particularly relates to a driving method of a liquid crystal display panel and the liquid crystal display panel. The driving method of the liquid crystal display panel is used to display images frame by frame, the display process of each frame of image includes a data transmission stage including successively turning on the control element of each pixel, transmitting the image data to each pixel, and turning off the control element of each pixel after the image data is transmitted to each pixel; and a maintaining stage including maintaining the control elements of all of the pixels at the off state after the data of the whole frame of image is transmitted. The driving method of the liquid crystal display panel can at least solve the dizziness problem of virtual reality VR application, guarantees the touch control effect, and moreover, with respect to high refreshing frequency, the power consumption is reduced, and the application value of a display screen is greatly improved.

The present disclosure provides CMOS image sensors and fabrication methods thereof. An exemplary fabrication process of a CMOS image sensor includes providing a substrate having a first region and a second region connecting with the first region at a first end of the first region: forming a transfer transistor on surface of the substrate in the second region; forming a first implanting region in the substrate in the first region using a first mask; forming a second implanting region in the first implanting region by, the first implanting region being separated into a third implanting region on the second implanting region and a fourth implanting region under the second implanting region; forming a fifth region in the second region at the first end using a second mask, connecting the third implanting region with the fourth implanting region.

The invention provides a video face check method, which comprises the following steps that: when receiving a video face check request, a client sends a video face check instruction to a server, so that the server distributes a check end; When the agent token returned by the server is received, establishing a network connection with a corresponding audit end, and obtaining network state informationbetween the agent token and the audit end; obtaining original video data, and preprocessing the original video data based on the network state information to obtain client video data; and sending theclient video data to the auditing terminal, and displaying a corresponding auditing image when receiving the auditing terminal video data. The invention also provides a client, a server and a computer readable storage medium. According to the method, when the video face check is carried out, image jamming caused by a network problem in the video face check process can be reduced, the fluency andthe stability of the real-time video in the video face check process are improved, and the video face check process is guaranteed to be carried out smoothly.