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Silicon substrate for solar battery, manufacturing apparatus thereof, manufacturing method thereof, and solar battery

A technology for solar cells and manufacturing devices, which is applied to the silicon substrate of solar cells and the field of solar cells, can solve the problems of low absorption rate, high manufacturing cost, and difficulty in improving the absorption rate, so as to improve the absorption rate, reduce manufacturing costs, easy-to-manufacture effects

Inactive Publication Date: 2011-10-19
朴麟淳 +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The silicon substrate of the existing solar cell is planar, and since the installation area is almost the same as the solar light absorption surface area of ​​the silicon substrate, it is difficult to increase the absorption rate.
Also, in order to obtain the desired absorption rate, the thickness of the silicon substrate is 200-400 μm, so that the manufacturing cost becomes high
Moreover, since the silicon substrate is a planar type, it only absorbs a specific wavelength of sunlight locally composed of multiple wavelengths while other wavelengths are reflected or transmitted, so the absorption rate is very low.

Method used

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  • Silicon substrate for solar battery, manufacturing apparatus thereof, manufacturing method thereof, and solar battery
  • Silicon substrate for solar battery, manufacturing apparatus thereof, manufacturing method thereof, and solar battery
  • Silicon substrate for solar battery, manufacturing apparatus thereof, manufacturing method thereof, and solar battery

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Embodiment Construction

[0029] Hereinafter, a silicon substrate for a solar cell according to a preferred embodiment of the present invention will be described in detail with reference to the accompanying drawings.

[0030] figure 1 A silicon substrate according to a preferred embodiment of the present invention is schematically shown.

[0031] Such as figure 1 As shown, the silicon substrate 10 for solar cells in this embodiment includes: a plurality of curved surfaces 13 composed of concave portions 11 and convex portions 12 ; and planar portions 14 connected to both sides of the curved surfaces 13 . The curved portion 13 is used to absorb sunlight, and the flat portion 14 is used to absorb sunlight while being connected to other silicon substrates. The thickness of the silicon substrate 10 is 100-300 μm, which is half of the thickness of the existing substrate.

[0032] The curved portion 13 of the silicon substrate 10 of this embodiment has a semicircular shape and occupies approximately 90% o...

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Abstract

The present invention provides a silicon substrate (10) for a solar battery, wherein said silicon substrate (10) comprises: a plurality of curves (13) constituted by concave parts (11) and convex parts (12) to absorb solar light; and planes (14) connected to both edges of the curves to absorb solar light and to be connected to other silicon substrates. Each of the curves (13) and each of the planes (14) have a thickness of 100 to 300 [mu]m, and each of the concave parts (11) or each of the convex parts (12) has a semi-circular shape. The curves (13) occupy 90% or more of the total area.

Description

technical field [0001] The present invention relates to a silicon substrate for a solar cell, an apparatus and method for manufacturing the same, and a solar cell, and more specifically, to a silicon substrate for a solar cell whose solar light absorption surface area is increased relative to the installation area, Its manufacturing device, method and solar cell. Background technique [0002] Recently, the efficiency of solar cells has been actively researched and developed. A representative technique for improving the efficiency of a solar cell is disclosed in Korean Patent No. 10-741306 "High Efficiency Solar Cell and Manufacturing Method Thereof." The silicon substrate of the conventional solar cell is planar, and since the installation area is almost the same as the solar light absorption surface area of ​​the silicon substrate, it is difficult to increase the absorption rate. Also, in order to obtain a desired absorptivity, the thickness of the silicon substrate is 20...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/042
CPCB23D61/185B28D5/0076B28D5/0082B28D5/045H01L31/035281H01L31/1804Y02E10/547Y10T428/24628Y02P70/50H01L31/04H01L31/18
Inventor 朴麟淳崔明花
Owner 朴麟淳