Method for depositing amorphous silicon thin film in production of solar cells

Abstract

The invention relates to a method for depositing an amorphous silicon thin film in the production of solar cells. The method is implemented by adopting amorphous silicon thin film deposition equipment in a tunnel structural form through the following steps that: firstly, pairs of cells enter the equipment through a plate feed table under the drive of a transfer guide rail on which a cell plate hanging box is hung; then the cells enter a heating chamber through a buffer chamber sequentially and are respectively heated three times from low temperature to high temperature; after being heated three times, the cells enter a P-layer deposition chamber to deposit to form a layer P, enter a PI-layer mixed deposition chamber to deposit to form a mixed layer PI and then enter six I-layer depositionchambers; the cells are respectively subjected to deposition six times to form a layer I; after the layer I is deposited and formed, the cells enter an IN-layer mixed deposition chamber to deposit toform a mixed layer IN; then the cells enter two N-layer deposition chambers to be subjected to deposition twice to form a layer N; and finally the cells are discharged out of the equipment through the buffer chamber and a plate discharge table and enter next process equipment. In the operating process of the equipment, a vacuum system controls a vacuum value of each chamber by a vacuum pipeline connected to the chamber and the chambers are separated by valves to form relatively independent spaces, therefore, the aim of depositing the amorphous silicon thin film is achieved.

Description

technical field [0001] The invention relates to the field of solar cell production, in particular to a method for depositing an amorphous silicon thin film in solar cell production using special-purpose amorphous silicon thin film deposition equipment. Background technique [0002] Since the amorphous silicon thin film solar cell needs to deposit an amorphous silicon thin film during the production process to form a PIN junction, which is an important part of battery power generation. The existing deposition method has low efficiency, long time and poor effect. Seriously affect the conversion efficiency and service life of solar cells. [0003] Most of the existing amorphous silicon thin film deposition equipment is a horizontal structure, and all layers of PIN are deposited in the same chamber. The above structure has many shortcomings and deficiencies when depositing each layer of PIN, which are specifically manifested in: Horizontal structure deposition can only deposit...

AI Technical Summary

Problems solved by technology

The existing deposition method is inefficient, takes a long time, and the effect is not good

Seriously affect the conversion efficiency and service life of solar cells

[0003] Most of the existing amorphous silicon thin film deposition equipment is a horizontal structure, and all layers of PIN are deposited in the same chamber. The above structure has many shortcomings and deficiencies when depositing each layer of PIN, which are specifically manifested in: Horizontal structure deposition can only deposit one layer at a time, and the cycle is long

Each deposition needs to purge the chamber with gas; it is a great waste of time and gas; it is also easy to cause mutual pollution in the same chamber, resulting in an increase in waste chips, and the production capacity is very low, and the deposition effect is not good. Seriously affect the conversion efficiency of solar cells

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