Method for producing III-n layers, and III-n layers or III-n substrates, and devices based thereon

A III-N, substrate technology, applied in chemical instruments and methods, semiconductor/solid-state device manufacturing, crystal growth, etc., can solve problems such as not suitable for III-N wafers

Active Publication Date: 2014-06-18
FREIBERGER COMPOUND MATERIALS +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

These two methods are therefore only suitable for the generation of III-N wafers with M-plane or A-plane surfaces, but not for the generation of III-N wafers with C-plane surfaces

Method used

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  • Method for producing III-n layers, and III-n layers or III-n substrates, and devices based thereon
  • Method for producing III-n layers, and III-n layers or III-n substrates, and devices based thereon
  • Method for producing III-n layers, and III-n layers or III-n substrates, and devices based thereon

Examples

Experimental program
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Effect test

Embodiment 1

[0048] As an example, in an Aixtron 200 / 4RF-S MOVPE system, thin GaN layers can be grown on a sapphire heterogeneous substrate with a 0.3° misorientation. For example, the thickness of the thin GaN layer is less than 2 microns, in particular between 1 micron and 2 microns. Templates were unloaded from the MOVPE reactor and loaded onto an Aixtron LP-HVPE reactor. There, a thick GaN layer of a few hundred micrometers is grown on the template. For example, the operating conditions for HVPE treatment are: temperature between 1040°C and 1075°C, pressure between 900 mbar and 1000 mbar, N / III ratio of about 40, carrier gas of about 50% hydrogen and about 50% Nitrogen gas mixture. The growth rate in this example was about 40 microns / hour. By using a heterogeneous substrate with micro-orientation differences, the surface morphology was significantly improved after HVPE growth. Even with thick GaN layers of 40 microns or thicker, the surface morphology can be compared to much thinne...

Embodiment 2

[0050] The general framework of the present invention is that several templates on a sapphire heterogeneous substrate with misorientation and a conventional template on a sapphire heterogeneous substrate with accurate orientation are performed by using side by side in the same HVPE process. Compared.

[0051] All HVPE growth processing is done in an AIXTRON single wafer HVPE system with a horizontal quartz reactor. Metal Ga is delivered to the substrate by HCI gas in the usual manner. Ammonia was used as nitrogen source. The Ga source was operated at 850°C, while the substrate region was heated to 1040-1075°C. A 1:1 mixture of nitrogen and hydrogen was used as the carrier gas. The experiments were carried out at atmospheric pressure and a N / III ratio of approximately 40.

[0052] All HVPE growth layers were deposited on a GaN template grown by MOVPE on a two-inch thick sapphire wafer as the foreign substrate. Parallel use of four different templates is possible by loading...

Embodiment 3

[0059] The processing procedure described in Embodiment 2 is modified as follows:

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Abstract

An epitaxial growth process for producing a thick III-N layer, wherein III denotes at least one element of group III of the periodic table of elements, is disclosed, wherein a thick III-N layer is deposited above a substrate. The substrate can also be a template comprising the foreign substrate and at least one thin III-N intermediate layer. The surface quality is improved by a reduction of the N / III ratio and / or the reactor pressure towards the end of the epitaxial growth process.

Description

[0001] The application date is May 5, 2006, the application number is 200680015547.2, and the title of the invention is "method for generating III-N layer, and III-N layer or III-N substrate, and devices thereon" Divisional application of Chinese invention patent application. technical field [0002] The invention relates to a method for producing thick III-N layers and III-N substrates, wherein N is nitrogen and III is at least one element from group III of the periodic table, in particular selected from the group consisting of aluminum, gallium and indium One or more elements in (hereinafter referred to as III-N), the present invention also relates to thick III-N layers and III-N substrates with improved surface morphology. In particular, said III-N material is crystalline, especially single crystal. Background technique [0003] The III-N material system plays an important role in today's semiconductor materials. It is used in many important optoelectronic and electroni...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/40H01L21/205C30B25/02H01L33/32
CPCH01L21/02433C30B25/02H01L21/0242C30B29/406H01L21/0254Y10S117/915H01L21/0262Y10T428/24355C30B29/40H01L21/20
Inventor 费迪南·斯考兹彼得·布克纳弗兰克·哈伯尔马提亚·彼得克劳斯·柯勒
Owner FREIBERGER COMPOUND MATERIALS
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