Thermal Spray Coatings for Semiconductor Applications

A thermal spray coating and coating technology, applied in the coating, metal material coating process, melt spraying and other directions, can solve the problem of increasing the harshness of the cleaning process

Inactive Publication Date: 2011-12-07
PRAXAIR TECH INC
View PDF8 Cites 19 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In addition, etch operators perform more "dirty" processes, thus increasing the severity of the cleaning processes required for process chambers and component parts

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0016] The invention provides a solution to the damage of the internal components of the plasma processing container. The present invention enables the use of CF-based 4 / O 2 The damage caused by the plasma dry cleaning process) is minimized. As etch operators perform more "dirty" processes, there is a need to increase the severity of the cleaning process to provide process chambers and component parts suitable for semiconductor applications. For example, by-products from plasma processing chamber operations, such as chlorides, fluorides, and bromides, can react to form corrosive species such as HCl and HF when exposed to wet cleaning solutions during chamber and component part cleaning cycles. The present invention minimizes corrosion damage caused by harsh cleaning processes. The coated interior components of the present invention are able to withstand these more aggressive cleaning processes.

[0017] The present invention also minimizes damage caused by chemical etchin...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
particle diameteraaaaaaaaaa
particle sizeaaaaaaaaaa
thicknessaaaaaaaaaa
Login to view more

Abstract

This invention relates to thermally sprayed coatings on metallic or non-metallic substrates. The thermally sprayed coating comprises a partially or fully stabilized ceramic coating, e.g., a yttria-stabilized zirconia coating, and has a sufficiently high thermodynamic phase stability to provide corrosion resistance and / or Corrosion resistance. The invention also relates to methods of protecting metallic and non-metallic substrates by applying said thermal spray coatings. The coatings are used, for example, to protect integrated circuit fabrication equipment, internal chamber components, and electrostatic chuck fabrication.

Description

field of invention [0001] The present invention relates to thermally sprayed coatings for harsh conditions, eg, coating plasmas that provide erosion barrier and corrosion barrier protection in harsh environments such as plasma processing vessels used in semiconductor device fabrication. In particular, the present invention relates to coatings for extending the useful life of plasma processing vessel components under severe conditions, such as those used in semiconductor device fabrication. The invention is useful, for example, in protecting integrated circuit fabrication equipment, chamber components, and electrostatic chuck fabrication. Background of the invention [0002] Thermal spray coatings can be used to protect equipment and components used in erosive and corrosive environments. In semiconductor wafer fabrication operations, the interior of a process chamber is exposed to a variety of erosive and corrosive or reactive environments that may originate from corrosive g...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C23C4/08C23C4/10C23C4/12C23C24/08C23C14/56C23C16/44C23C4/06
CPCC23C4/10H01J37/32477C23C4/02C23C4/105C23C4/11Y10T428/249953Y10T428/31678C23C4/08C23C4/12C23C24/08
Inventor G·迪金森J·西尔曼A·阿沙里C·佩托拉克N·J·麦迪尔
Owner PRAXAIR TECH INC
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap