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High frequency switching circuit

A high-frequency switching and switching technology, applied in electronic switches, electrical components, transmission systems, etc., to achieve the effect of suppressing second harmonic distortion

Inactive Publication Date: 2016-09-21
RENESAS ELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, a configuration in which multiple MOSFETs are connected in series and connected in multiple stages produces second and third harmonics

Method used

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  • High frequency switching circuit
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  • High frequency switching circuit

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no. 1 example

[0055] Embodiments of the present invention will be described below with reference to the drawings.

[0056] figure 1 is a circuit diagram of a high-frequency switching circuit according to a first embodiment of the present invention. The high-frequency switch circuit according to the present embodiment includes at least a first switch and a second switch. The first switch is connected between the common terminal (ANT terminal) and the first terminal (port 1 terminal). The second switch is connected between the common terminal and the second terminal (port 2 terminal). In this embodiment, for example, a single pole double throw (SPDT) switch is described. However, the present invention can be similarly applied to other high frequency switching circuits such as single pole 4 throw (SP4T) switches and SP10T. That is, the high-frequency switch circuit according to the present embodiment can be applied to switching the conduction state and High-frequency switching circuit in...

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Abstract

The invention provides a high frequency switch circuit. A high-frequency switch circuit according to the present invention includes at least a first switch connected between a common terminal and a first terminal, and a second switch connected between the common terminal and a second terminal. Each of the first and second switches includes a plurality of field effect transistors connected in series and each field effect transistor has a body, a source, a drain, and a gate. A compensation capacitance that compensates for a parasitic capacitance generated when the first switch is in an off state is formed between a drain and a body or between a source and a body in the FET of the first switch. A compensation capacitance that compensates for a parasitic capacitance generated when the second switch is in an off state is formed between a drain and a body or between a source and a body in the FET of the second switch.

Description

[0001] Cross References to Related Applications [0002] This application is based on and claims priority from Japanese Patent Application No. 2010-096015 filed on Apr. 19, 2010, the entire contents of which are hereby incorporated by reference in their entirety. technical field [0003] The present invention relates to a high frequency switching circuit, and more particularly, to a high frequency switching circuit with a field effect transistor. Background technique [0004] Multi-port high-frequency switch circuits are known for switching connections between multi-port terminals and antenna terminals of multi-mode / multi-band wireless communication devices such as those used for mobile communication (GSM) or Universal Mobile Telecommunications System (UMTS). Such a high-frequency switching circuit is required to have low insertion loss and maintain the linearity of an output signal even when a large signal is supplied. Generally, as a high-frequency switching circuit sati...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H03K17/16H03K17/56H03K17/687H03K17/693H04B1/3822H04B1/40
CPCH03K17/693
Inventor 木下友太冈下友则
Owner RENESAS ELECTRONICS CORP