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Method for preparing porous aluminium nitride particle or porous gallium nitride particle by two-step nitridation method

A technology of aluminum nitride and gallium nitride, applied in chemical instruments and methods, nitrogen compounds, nitrogen-metal/silicon/boron binary compounds, etc. It has been applied in the pore, and the pore occupies a small space, so as to achieve the effect of a large pore occupied space, a small pore size, and a large specific surface area.

Inactive Publication Date: 2013-06-05
XIAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] The purpose of the present invention is to provide a method for preparing porous aluminum nitride (AlN) particles or porous gallium nitride (GaN) particles by a two-step nitriding method, which solves the problem that the prior art cannot effectively synthesize porous AlN or GaN particles or The prepared porous AlN or GaN particles have a small specific surface area and a small space occupied by the pores, which cannot be applied in practice.

Method used

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  • Method for preparing porous aluminium nitride particle or porous gallium nitride particle by two-step nitridation method
  • Method for preparing porous aluminium nitride particle or porous gallium nitride particle by two-step nitridation method
  • Method for preparing porous aluminium nitride particle or porous gallium nitride particle by two-step nitridation method

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Embodiment 1

[0041] A method for preparing porous AlN microparticles by a two-step nitriding method, comprising the following steps:

[0042] Step 1, raw material preparation:

[0043] Weighing 50g of Al block with a purity of 99.5% and 50g of Mg block with a purity of 99%, the percentage by weight of the Al block in the entire raw material is 50%wt;

[0044] Step 2, alloy melting and preparation:

[0045] Put the Al block and Mg block into the crucible, and then put them into the heating furnace together with the crucible to melt into the corresponding alloy;

[0046] Step 3, the crushing of the alloy body:

[0047] Crush the alloy obtained by smelting into particles with a particle size of 0.01-1mm;

[0048] Step 4, nitriding of alloy powder:

[0049] Put the pulverized alloy powder particles into the reaction furnace, evacuate the reaction furnace to make the vacuum in the furnace 0.1atm, and then fill the reaction furnace with high-purity nitrogen with a purity of 99.99%. When the ...

Embodiment 2

[0055] A method for preparing porous GaN microparticles by a two-step nitriding method, comprising the following steps:

[0056] Step 1, raw material preparation:

[0057] Weighing 80g of Ga liquid with a purity of 99.95% and 20g of Mg blocks with a purity of 99.95%, the percentage by weight of Ga liquid in the entire raw material is 80%wt;

[0058] Step 2, alloy melting and preparation:

[0059] Put the Ga liquid and the Mg block into the crucible, and then put them into the heating furnace together with the crucible to melt into the corresponding alloy;

[0060] Step 3, the crushing of the alloy body:

[0061] Crush the alloy obtained by smelting into particles with a particle size of 0.01-1mm;

[0062] Step 4, nitriding of alloy powder:

[0063] Put the pulverized alloy powder particles into the reaction furnace, evacuate the reaction furnace to make the vacuum in the furnace 0.05atm, and then fill the reaction furnace with high-purity nitrogen with a purity of 99.999%....

Embodiment 3

[0069] A method for preparing porous AlN microparticles by a two-step nitriding method, comprising the following steps:

[0070] Step 1, raw material preparation:

[0071] Weighing 100g of Al block with a purity of 99.5% and 50g of Li block with a purity of 99%, the weight percentage of Al block in the entire raw material is 66.7%wt;

[0072] Step 2, alloy melting and preparation:

[0073] Put the Al block and Li block into the crucible, and then put them into the heating furnace together with the crucible to melt into the corresponding alloy;

[0074] Step 3, the crushing of the alloy body:

[0075] Crush the alloy obtained by smelting into particles with a particle size of 0.01-1mm;

[0076] Step 4, nitriding of alloy powder:

[0077] Put the crushed alloy powder particles into the reaction furnace, evacuate the reaction furnace to make the vacuum in the furnace 0.01atm, and then fill the reaction furnace with high-purity nitrogen with a purity of 99.999%. When the nitro...

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Abstract

The invention discloses a method for preparing porous AlN or porous GaN particles by a two-step nitridation method, which comprises the following steps: putting prepared raw materials in a crucible, putting the crucible with the materials into a heating furnace, performing alloy melting, cooling the alloy, performing pulverization, putting the pulverized alloy powder particles into a reaction furnace; vacuumizing the reaction furnace, injecting high-purity nitrogen, heating the alloy powder to 500-750 DEG C for first nitridation, heating to 850-1100 DEG C for second nitridation, soaking the alloy powder particles after nitridation with acids, removing the nitrides of B-component alloy so as to obtain porous A-component nitrides, that is, the porous AlN particles or porous GaN particles. The method of the invention prepares porous AlN particles or GaN particles which have a pore diameter of a hundred nanometers to several tens micrometers, have a particle size within orders of magnitude from several hundreds nanometers to several hundreds micrometers, and have a specific surface area of up to 100 m2 / g.

Description

technical field [0001] The invention belongs to the technical field of nano inorganic non-metallic semiconductor and photoelectric material science and engineering, and specifically relates to a method for preparing porous aluminum nitride (AlN) particles or porous gallium nitride (GaN) particles by a two-step nitriding method. Background technique [0002] Porous AlN or GaN particles with a pore structure and porous Group III alloy nitride particles based on them have high specific surface area, enhanced photoelectric response characteristics, enhanced nonlinear optical characteristics, and photocatalytic properties. , fuel cells, photocatalytic water splitting, ultraviolet detection and sensors, and nonlinear optics have great application prospects. Therefore, the research on porous AlN or GaN particles has become an important research hotspot in the field of porous semiconductor research. However, so far, the main reason why porous AlN or GaN semiconductor particles cann...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B21/072C01B21/06B82Y40/00
Inventor 颜国君
Owner XIAN UNIV OF TECH
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