Overlapped trench gate semiconductor component and manufacturing method thereof

Abstract

The invention provides an overlapped trench-type grid semiconductor component and a manufacturing method thereof. The overlapped trench-type grid semiconductor component comprises a semiconductor substrate, multiple shallow trenches arranged on the semiconductor substrate, a first conductive layer arranged in the shallow trenches, multiple deep trenches respectively arranged in the shallow trenches, a second conductive layer filled in the deep trenches, a source electrode metal layer and a grid electrode metal layer, wherein each deep trench extends to the semiconductor substrate below each shallow trench; the source electrode metal layer is electrically connected with the second conductive layer, and the grid electrode metal layer is electrically connected with the first conductive layer. Thus, the feedback capacitance between the first conductive layer and the semiconductor substrate can be reduced, the ratio of the input capacitance to the feedback capacitance can be increased, and the Miller effect can be further reduced.

Description

technical field [0001] The invention relates to an overlapping trench gate semiconductor component and its manufacturing method, especially to an overlapping trench gate semiconductor component with lower parasitic capacitance between the gate and the drain, and its manufacturing method. Background technique [0002] Trench gate semiconductor components are mainly used in power management, such as switching power supplies, computer centers or peripheral power management integrated circuits, backlight power supplies, and motor control. [0003] Please refer to figure 1 , figure 1 It is a schematic cross-sectional view of a known trench gate semiconductor device. Such as figure 1 As shown, the known trench gate semiconductor component 10 includes an N-type substrate 12, an N-type epitaxial layer 14, a plurality of trenches 16, a gate insulating layer 18, a plurality of gates 20 and a source metal Layer 22. The N-type epitaxial layer 14 is disposed on the N-type substrate ...

AI Technical Summary

Problems solved by technology

[0006] However, since the shielding electrode structure is located below the gate structure and in the same trench, multiple deposition and etch-back process steps are required to form the shielding electrode structure and the gate structure, which not only consumes time, but also increases the process cost. the cost of

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