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Film forming device

A film-forming device and film-forming technology, applied in ion implantation plating, coating, electrical components, etc., can solve problems such as poor film-forming speed

Inactive Publication Date: 2012-01-11
HITACHI HIGH-TECH CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] However, these methods have a problem that the film formation rate is not as good as compared with the usual sputtering method.

Method used

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Experimental program
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Embodiment 1

[0038] The first embodiment is a swinging magnetron sputtering device with a sputtering target and a movable shield electrode. Electrodes synchronously perform low-damage sputtering film formation, while the reciprocating circuit does not make the magnetron and movable shield electrode synchronously perform common parallel plate type sputtering film formation.

[0039] figure 1 , shows the cross-sectional structure of the basic configuration of the sputtering device of the present invention. In the vacuum chamber 10 , a target 11 , a target electrode 12 , a movable shield electrode 13 , a fixed shield electrode 14 around the target 11 , a sample substrate 15 , and a substrate electrode 16 are arranged. In addition, although not shown in the figure, a transport mechanism for taking out and putting in substrates is also provided. On the other hand, outside the vacuum chamber 10, a swing magnetron 17 is arranged on the back surface of the target electrode 12 exposed to the air...

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Abstract

The invention provides a film forming device, which has a relatively small size, leads to low damage on a thin-film organic EL material and performs high-speed sputtering film formation. Magnetron plasmas (20) is sealed inside a movable screening electrode (13). The movable screening electrode (13) has an opening on the target material 11 side and gaps located on the substrate side and making sputtering particles inside a shutting face go through. The movable screening electrode (13) and the magnetron (17) are simultaneously scanned so as to form films with less damage on a lower film. Then only the magnetron (17) is scanned for high-speed film formation through the magnetron plasmas. In this way, high-speed formation with less damage on the lower films can be achieved.

Description

technical field [0001] The present invention relates to a film-forming device using sputtering, and relates to a sputtering device capable of high-speed film-forming with less damage to a film-forming surface, especially organic films such as organic EL. Background technique [0002] Organic EL elements have attracted attention in recent years as display elements or lighting elements. Typical device structures of organic EL elements are: Figure 10 As shown, the lower electrode 2, the hole injection layer 3, the hole transport layer 4, and the light emitting layer are stacked directly on a substrate 1 such as glass or on a passivated substrate 1 where TFT elements for active matrix driving are formed and passivated. 5. Electron transport layer 6, electron injection layer 7, top cathode type of upper electrode 8. In addition there are such Figure 11 A top anode type in which a lower electrode 2 , an electron injection layer 7 , an electron transport layer 6 , a light emitt...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35
CPCC23C14/35H10K71/164H10K71/00
Inventor 楠敏明三宅龙也山本健一玉腰武司
Owner HITACHI HIGH-TECH CORP