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Semiconductor and making method thereof

A semiconductor, conductive type technology applied in the field of power metal-oxide-semiconductor transistors

Inactive Publication Date: 2012-01-11
MACRONIX INT CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

One problem encountered when designing such LDPMOS devices is that those approaches that tend to maximize BVD also tend to onsp具 have a negative impact and vice versa

Method used

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  • Semiconductor and making method thereof
  • Semiconductor and making method thereof
  • Semiconductor and making method thereof

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Embodiment Construction

[0074]Now, embodiments of the present invention will be described and shown in the drawings, examples of which should be construed as being adapted to certain embodiments and not to others in respect of each example. In some embodiments, similar or identical reference numerals in the drawings as used in the description denote identical, similar or similar components and / or components, while the same usage in accordance with other embodiments should not be the case. According to some embodiments, use of directional terms (e.g., up, down, left, right, up, down, over, over, under, under, behind, and in front) should be interpreted literally, whereas The same usage of other embodiments should not be the case. The present invention may be implemented in conjunction with various conventionally used integrated circuit fabrication and other techniques, and only so many process steps as are commonly implemented are included here as necessary to provide an understanding of the present i...

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Abstract

The invention relates to a lateral- and double-diffusion metal-oxide-semiconductor, which can increase breakdown voltage and specific conduction resistance. The lateral- and double-diffusion metal-oxide-semiconductor is arranged in a structure, encircles a P field in a lightly doped region, and can increase the breakdown voltage and keep in the specific conduction resistance.

Description

technical field [0001] The present invention relates to a semiconductor, and in particular to a power metal-oxide layer-semiconductor transistor, a manufacturing method and a using method thereof. Background technique [0002] A lateral double diffused metal-oxide-semiconductor (LDMOS) field effect transistor (MOSFET) is a MOSFET fabricated with coplanar drain and source regions. LDMOS devices with P-channels may be referred to as LDPMOS devices. These devices are typically used in high voltage applications and when designing such LDPMOS devices it is important that the device has a high breakdown voltage (BVD) while also exhibiting a low specific on-resistance (R onsp ). by design with a low R onsp LDPMOS devices with high BVD can achieve low power loss in high voltage applications. Also, when the transistor is in saturation, the low R onsp can facilitate high drain current (I dsat ). One problem encountered when designing such LDPMOS devices is that those approaches...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/78H01L21/336
Inventor 黄胤富锺淼钧连士进
Owner MACRONIX INT CO LTD