Semiconductor structure and manufacturing method thereof

A manufacturing method and semiconductor technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as large base resistance and large leakage current, and achieve the effect of reducing base resistance and changing flow paths

Inactive Publication Date: 2012-01-25
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] Although the quality of the epitaxial layer is getting better and better, when the epitaxial layer reaches a certain thickness, the thick epitaxial layer will make the base resistance of the parasitic BJT (bipolar junction transistor) very large, especially for later

Method used

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  • Semiconductor structure and manufacturing method thereof
  • Semiconductor structure and manufacturing method thereof
  • Semiconductor structure and manufacturing method thereof

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Embodiment Construction

[0021] In order to make the object, technical solution and advantages of the present invention clearer, the embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

[0022] Embodiments of the present invention are described in detail below, examples of which are shown in the drawings, wherein the same or similar reference numerals designate the same or similar elements or elements having the same or similar functions throughout. The embodiments described below by referring to the figures are exemplary only for explaining the present invention and should not be construed as limiting the present invention.

[0023] The following disclosure provides many different embodiments or examples for implementing different structures of the present invention. To simplify the disclosure of the present invention, components and arrangements of specific examples are described below. Of course, they are only examples and are not int...

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Abstract

The invention provides a manufacturing method of a semiconductor structure, which is characterized by comprising the following steps of: providing a semiconductor substrate and forming an epitaxial layer on the semiconductor substrate; forming a semiconductor device on the epitaxial layer, wherein the semiconductor device comprises a source region, a drain region and a grid stack; and forming a conductive layer which is not connected with the semiconductor device at the periphery of the semiconductor device and used for reducing base resistance. Correspondingly, the invention also provides a semiconductor structure manufactured by the method. The manufacturing method and the semiconductor structure are used to restrain the parasitic effect of a BJT (bipolar junction transistor) effectively, thereby improving the overall performance of the semiconductor device.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a semiconductor structure and a manufacturing method thereof. Background technique [0002] With the development of the semiconductor industry, integrated circuits with higher performance and stronger functions require greater component density, and the size, size, and space of each component, between components, or each component itself need to be further reduced (currently, it has reached nanometers. level), so the requirements for process control in the manufacturing process of semiconductor devices are relatively high. [0003] With the rapid development of microelectronics technology, the quality of epitaxial layers grown on high-concentration substrates is getting better and better, so many thick epitaxial devices based on epitaxial layers have appeared in recent years. In power amplifier devices, VDMOS (Vertical Double Diffused Metal Oxide Semiconductor Field Ef...

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Application Information

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IPC IPC(8): H01L21/336H01L21/331H01L29/78H01L29/739
Inventor 姜一波曾传滨杜寰
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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