Chemical mechanical planarization using nanodiamond

Abstract

A method for chemical mechanical polishing of a substrate includes polishing the substrate at a stock removal rate of greater than about 2.5 Angstrom / min to achieve a Ra of not greater than about 5.0 Angstrom. The substrate can be a III-V substrate or a SiC substrate. The polishing utilizes a chemical mechanical polishing slurry comprising ultra-dispersed diamonds and at least 80 wt% water.

Description

technical field [0001] The present disclosure generally relates to chemical mechanical planarization using nanodiamonds. Background technique [0002] GaN-based structures are recognized as a promising material for short-wavelength optoelectronic devices and high-power, high-frequency electronics. However, the potential of this material has been limited by the shortage of suitable lattice-paired substrates for epitaxially grown device layers. This has led to the development of bulk GaN substrates. Along with the development of these substrates, surface preparation techniques such as chemical mechanical planarization (CMP) must also be investigated to provide atomically smooth, damage-free surfaces. Furthermore, alternative methods that can further scale GaN technology, including wafer bonding, and layer transfer techniques, generally require planarization steps that create the need for well-controlled GaN CMP methods. [0003] CMP uses a combination of chemical and mechan...

AI Technical Summary

Problems solved by technology

Although CMP slurries have been developed to achieve angstrom-level surface roughness, there remains a need for improved CMP slurries

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