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Method for fabricating trench metal oxide semiconductor field effect transistor

A technology of oxide semiconductor and manufacturing method, applied in the direction of semiconductor/solid-state device manufacturing, semiconductor device, electrical components, etc., can solve problems such as limiting device and integrated circuit application, low monocrystalline silicon characteristics, etc.

Active Publication Date: 2013-07-10
AOTU ELECTRONICS WUHAN
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, due to oxygen impurities, Figure 1A The SEG process shown, Figure 1B shown in the ELO process as well as Figure 1C The MELO process shown has low monocrystalline silicon characteristics, limiting the application of devices and integrated circuits fabricated on such epi silicon on insulator structures

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  • Method for fabricating trench metal oxide semiconductor field effect transistor
  • Method for fabricating trench metal oxide semiconductor field effect transistor
  • Method for fabricating trench metal oxide semiconductor field effect transistor

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Embodiment Construction

[0019] A detailed description will be given below of embodiments of the present invention. Although the present invention has been illustrated and illustrated by these examples, it should be noted that the present invention is not limited to these examples. On the contrary, the invention covers all alternatives, modifications and equivalents which are within the spirit and scope of the invention as defined by the appended claims.

[0020] In addition, in order to better illustrate the present invention, numerous specific details are given in the following specific examples. Those skilled in the art can understand that the present invention can be practiced without these specific details; in other instances, well-known methods, processes, components and circuits are not described in detail so as to highlight the gist of the present invention.

[0021] Figure 2A-Figure 2F An exemplary cross-sectional view of a trench MOSFET manufacturing process sequence provided for an embod...

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Abstract

A trench metal oxide semiconductor field effect transistor (MOSFET) can be fabricated in an upward direction. A trench bottom doping (TBD) process and / or a trench bottom oxide (TBO) process can be performed after formation of a substrate and a first epitaxial (epi) layer. Poly seal can be performed after the formation of TBO layers and before a merged epitaxial lateral overgrowth (MELO) step to improve quality and purity of a second epi layer formed in the MELO step. Plasma dry etching with an end point mode can be performed according to the locations of TBO layers to improve the uniformity of trench depth.

Description

technical field [0001] The present invention relates to trench metal oxide semiconductor field effect transistors (Metal Oxide Semiconductor Field Effect Transistors, referred to as MOSFETs), in particular to a method for manufacturing trench MOSFETs. Background technique [0002] Semiconductor devices such as power Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) used in various applications have received much attention over the past few decades. In the mid-1970s, planar MOSFETs appeared; by the end of the 1980s, trench MOSFETs began to enter the power MOSFET market, and trench MOSFETs adopted dynamic random access memory (DRAM) trench technology that increases the characteristic on-resistance between the drain and source of the MOSFET. [0003] Because the vertical channel is used to obtain a more suitable cell pitch, this makes the trench MOSFET superior to the planar MOSFET in terms of current density. However, the gate-drain charge (called Q GD ) but high...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/8234
CPCH01L29/42368H01L21/02647H01L29/66734H01L29/0878H01L29/7813H01L21/02639
Inventor 汉密尔顿·卢拉兹洛·利普赛依
Owner AOTU ELECTRONICS WUHAN