Back contacting and interconnection of two solar cells
A technology of solar cells and silicon solar cells, which is applied in circuits, electrical components, photovoltaic power generation, etc., and can solve problems such as solar cell alignment and cell damage
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no. 1 example
[0085] The first embodiment of the method of the present invention consists of Figures 1a-1e illustrate.
[0086] The first embodiment of the method of the invention starts with a silicon solar cell 100 . The silicon solar cell 100 can be p-type or n-type. The silicon solar cell 100 has been doped to form a region 101 with n-type conductivity and a region 102 with p-type conductivity. The silicon solar cell 100 has undergone extensive front-side processing to form the surface region 103 by methods including damage etching, surface roughening, and surface passivation. Figure 1a Two silicon solar cells 100 are shown with their front sides facing down on a module superstrate 104 on which an adhesive layer 105 is applied.
[0087] Figure 1a Area A in refers to the area between the solar cells to be interconnected.
[0088] The back surface can be flat or roughened, for example by wet chemical or plasma treatment.
[0089] Structure 120 is first exposed, for example, by expo...
no. 2 example
[0104] The second embodiment of the method of the present invention begins with the same steps as the first embodiment, such as Figure 2a shown in .
[0105] After applying the a-Si:H layer 108, the a-Si:H layer 108 and a-SiN in region B are removed x :H layer 107 while leaving at least some of the a-Si:H layer 106 in region B undamaged, thereby providing a contact site in region B.
[0106] This can be achieved by spray etching, laser ablation, screen printing etching or using a patterned etch mask followed by etching and then removing the etch mask.
[0107] Next, reflective material 116 is applied by inkjet printing, screen printing, or other suitable technique. In the area where the reflective material 116 is applied, an area where no metal contact exists is defined, so that the process of separating the silicon material layer 108 is realized through the first area C, as Figure 2b shown in .
[0108] The material of the reflective layer 116 may generally include a re...
no. 3 example
[0118] Until the metal deposition step, the third embodiment starts with the same steps as the second embodiment, such as Figure 3a and 3b shown in .
[0119] In a third embodiment of the present invention, the metal layer 109 is deposited by a non-selective technique, such as evaporation or sputtering, so that the metal layer 109 covers the entire structure 120, as Figure 3c shown in .
[0120] Suitable metals for evaporation or subsequent silicide formation include nickel, palladium, titanium, silver, gold, aluminum, tungsten, vanadium, chromium, or any combination of these metals.
[0121] After metal layer 109 is applied, a suitable annealing step is performed on structure 120 to facilitate the formation of suicide 110 where metal layer 109 contacts the silicon material ( Figure 3d ). Silicides can typically be prepared at temperatures ranging from 175°C to 550°C, more preferably 225°C to 500°C, most preferably 275°C to 450°C for 5 to 60 seconds, depending on the me...
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Abstract
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