Low emissivity glass containing silver

A low-emissivity glass and a manufacturing method technology, applied in the field of special glass, can solve the problems of appearance color showing interference color, reducing visible light transmittance, affecting the use of glass, etc.

Active Publication Date: 2012-03-14
CSG HOLDING
View PDF7 Cites 14 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In the process of traditional low-emissivity glass processing, in order to achieve a better U value and selectivity coefficient Lsg, it is necessary to increase the thickness of the silver layer in the film layer to reduce the emissivity of the g

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Low emissivity glass containing silver
  • Low emissivity glass containing silver
  • Low emissivity glass containing silver

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0069] The film structure of the silver-containing low-emissivity glass embodiment 1 is as follows: glass, ZnSnO x , Ag, NiCrO x , ZnSnO x , Ag, NiCrO x , ZnSnO x , Ag, NiCrO x , ZnSnO x , Ag, NiCrO x , ZnSnO x 、Si 3 N 4 .

[0070] In this embodiment, the base dielectric combination layer is ZnSnO x layer with a thickness of 27 nm.

[0071] In this embodiment, the thickness of the first silver layer is 8nm.

[0072] In this embodiment, the first barrier layer is NiCrO x layer with a thickness of 0.3 nm.

[0073] In this embodiment, the first interlayer dielectric combination layer is ZnSnO x layer with a thickness of 69 nm.

[0074] In this embodiment, the thickness of the second silver layer is 12nm.

[0075] In this embodiment, the second barrier layer is NiCrO x layer with a thickness of 0.3 nm.

[0076] In this embodiment, the second interlayer dielectric combination layer is ZnSnO x layer with a thickness of 71 nm.

[0077] In this embodiment, the thic...

Embodiment 2

[0094] The film structure of another specific embodiment of the silver-containing low-emissivity glass is as follows: glass, Si 3 N 4 , Ag, NiCr, Si 3 N 4 , Ag, NiCr, Si 3 N 4 , Ag, NiCr, Si 3 N 4 , Ag, NiCr, Si 3 N 4 、TiO 2 .

[0095] In this embodiment, the base dielectric combination layer is Si 3 N 4 layer with a thickness of 25 nm.

[0096] In this embodiment, the thickness of the first silver layer is 7.6 nm.

[0097] In this embodiment, the first barrier layer is a NiCr layer with a thickness of 0.3 nm.

[0098] In this embodiment, the first interlayer dielectric combination layer is Si 3 N 4 layer with a thickness of 67 nm.

[0099] In this embodiment, the thickness of the second silver layer is 10.8nm.

[0100] In this embodiment, the second barrier layer is a NiCr layer with a thickness of 0.3 nm.

[0101] In this embodiment, the second interlayer dielectric combination layer is Si 3 N 4 layer with a thickness of 69 nm.

[0102] In this embodimen...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to view more

Abstract

The invention discloses a low emissivity glass containing silver, a structure of a film layer successively comprises a glass substrate, a base layer dielectric combination layer, a first silver layer, a first blocking layer, a first interlayer dielectric combination layer, a second silver layer, a second blocking layer, a second interlayer dielectric combination layer, a third silver layer, a third blocking layer, a third interlayer dielectric combination layer, a fourth silver layer, a fourth blocking layer, an upper layer dielectric combination layer. The glass containing silver has the advantages of low emissivity, high visible light transmittance, no interference color appearance, high selection coefficient and good energy saving effect; the unique film layer structure has the advantages of good weatherability, difficult shedding and difficult oxidation, and can be widely popularized and applied to vehicle glass and civil architecture glass. The invention also provides a method for manufacturing low emissivity glass containing silver.

Description

【Technical field】 [0001] The invention relates to the field of special glass, in particular to a silver-containing low-emissivity glass and a manufacturing method thereof. 【Background technique】 [0002] Low-emissivity glass is a layer of infrared reflective material deposited on the surface of the glass, so that the visible light in the sunlight can pass through, and like an infrared reflector, it excludes the infrared rays in the sunlight and reflects the secondary radiant heat of the object back. special glass. Through the use of low-e glass, the effects of controlling sunlight, saving energy, controlling heat and improving the environment can be achieved. [0003] In the process of traditional low-emissivity glass processing, in order to achieve a better U value and selectivity coefficient Lsg, it is necessary to increase the thickness of the silver layer in the film layer to reduce the emissivity of the glass film layer to obtain an ideal selectivity coefficient, but ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): C03C17/36
Inventor 陈可明曾小绵
Owner CSG HOLDING
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap