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Method for removing metal impurities from silicon germanium alloy by directional solidification

A silicon-germanium alloy, directional solidification technology, applied in chemical instruments and methods, single crystal growth, polycrystalline material growth, etc., can solve problems affecting thermoelectric performance, photoelectric performance, etc., to protect the environment, improve economic benefits, and reduce costs Effect

Inactive Publication Date: 2014-05-07
KUNMING UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the existence of metal impurities in silicon germanium alloy materials will greatly affect its thermoelectric performance and photoelectric performance.

Method used

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  • Method for removing metal impurities from silicon germanium alloy by directional solidification

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0019] (1) Heating and melting: Under normal pressure conditions and under the protection of argon gas, silicon-germanium alloy materials containing Ca, Fe, and Al impurities (silicon-germanium alloy materials containing Ca, Fe, and Al impurities are used as waste metal-containing impurities produced by enterprises) Si-germanium alloy crucible bottom material, the weight percentage of which is: 1.6%, 12%, 2.2%) is put into the furnace, heated until the mixture is melted, and then the temperature in the furnace is adjusted to 1400°C and kept for 20 minutes;

[0020] (2) Directional solidification treatment: The molten material prepared in step (1) is subjected to directional solidification treatment at a solidification rate of 2 μm / s. During the solidification process, impurity elements are excluded into the liquid phase at the solid-liquid interface , with crystal growth deposited on the head and tail parts of the condensed ingot;

[0021] (3) Cutting and separation: cut off ...

Embodiment 2

[0023] (1) Heating and melting: Under normal pressure conditions and under the protection of argon gas, silicon-germanium alloy materials containing Ca, Fe, and Al impurities (silicon-germanium alloy materials containing Ca, Fe, and Al impurities are used as waste metal-containing impurities produced by enterprises) The silicon-germanium alloy crucible bottom material, the weight percentage of which is: 8%, 1.9%, 9%) is put into the furnace, heated until the mixture is melted, and then the temperature in the furnace is adjusted to 1600°C and kept for 10 minutes;

[0024] (2) Directional solidification treatment: The molten material prepared in step (1) is subjected to directional solidification treatment at a solidification rate of 60 μm / s. During the solidification process, impurity elements are excluded into the liquid phase at the solid-liquid interface , with crystal growth deposited on the head and tail parts of the condensed ingot;

[0025] (3) Cutting and separation: c...

Embodiment 3

[0027] (1) Heating and melting: Under normal pressure conditions and under the protection of argon gas, silicon-germanium alloy materials containing Ca, Fe, and Al impurities (silicon-germanium alloy materials containing Ca, Fe, and Al impurities are used as waste metal-containing impurities produced by enterprises) Si-germanium alloy crucible bottom material, the weight percentage of which is: 10.1%, 13%, 11.3%) is put into the furnace, heated until the mixture is melted, and then the temperature in the furnace is adjusted to 1700°C and kept for 90 minutes;

[0028] (2) Directional solidification treatment: The molten material prepared in step (1) is subjected to directional solidification treatment at a solidification rate of 90 μm / s. During the solidification process, impurity elements are excluded into the liquid phase at the solid-liquid interface , with crystal growth deposited on the head and tail parts of the condensed ingot;

[0029] (3) Cutting and separation: cut o...

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Abstract

The invention discloses a method for removing metal impurities from silicon germanium alloy by directional solidification. The method comprises the following steps: taking the silicon germanium alloy which contains metal impurities, such as Ca, Fe, Al and the like as the raw material; melting the raw material at normal pressure under the protection of inert gas, and carrying out heat insulation at the temperature of 1400-1700DEG C for 10-90 minutes; then, carrying out directional solidification and refining on fusant at the solidification rate of 2-90mu m / s; in the condensing process of the fusant, and growing and enriching the metal impurities on the tail and the head of an ingot together with crystals; and cutting off the head and the tail of the obtained ingot to obtain a silicon germanium alloy product with high purity. In the process, the strainaway rate of impurities such as Ca, Fe, Al and the like can be above 95%. The invention is a method for purifying the silicon germanium alloy, which has the advantages of short technical flow, low cost and low environment pollution and satisfies the requirement on alloy materials in industrial production, military and communication fields; moreover, the regeneration and recycling of secondary resources can be realized.

Description

technical field [0001] The invention relates to a method for directional solidification to remove impurities, in particular to a method for obtaining high-purity silicon-germanium alloy products by adopting directional solidification to remove metal impurities in silicon-germanium alloys. technical background [0002] Silicon-germanium alloy materials are known as "second-generation silicon microelectronic materials". It has many unique physical properties such as high carrier mobility, adjustable energy band, and the forbidden band width can be easily adjusted precisely by changing the content of germanium, and has important application value. In the field of optoelectronics, silicon-germanium alloys have broad application prospects. It can be used as a substrate material to manufacture photodetectors, such as gamma detectors and IR photodetectors, and can also be used as infrared filters and lenses. On the other hand, new materials SiGe, GaAs, InP and their new structure...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/52
Inventor 马文会吴岚陈秀华李程张聪魏奎先伍继君周阳谢克强吴兴惠
Owner KUNMING UNIV OF SCI & TECH