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Complementary metal oxide semiconductor (CMOS) segmented high-order temperature compensated sub-threshold reference voltage source

A high-level temperature compensation and reference voltage source technology, applied in the power supply field, can solve the problems of development limitations, poor compatibility between BJT tubes and CMOS processes, etc., to improve the power supply voltage rejection ratio, high temperature stability, and high power supply voltage. The effect of suppression ratio

Inactive Publication Date: 2013-08-28
SOUTHEAST UNIV
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  • Application Information

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Problems solved by technology

However, due to poor compatibility between BJT tube and CMOS process, its development is limited

Method used

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  • Complementary metal oxide semiconductor (CMOS) segmented high-order temperature compensated sub-threshold reference voltage source
  • Complementary metal oxide semiconductor (CMOS) segmented high-order temperature compensated sub-threshold reference voltage source
  • Complementary metal oxide semiconductor (CMOS) segmented high-order temperature compensated sub-threshold reference voltage source

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Embodiment Construction

[0021] The invention is described in detail below in conjunction with the drawings:

[0022] The principle diagram of the present invention is as figure 1 As shown, it includes a startup circuit, a reference core circuit, a digital temperature detection circuit, and a segmented high-order temperature compensation circuit.

[0023] The start-up circuit includes four MOS transistors: PM0, PM4, PM5 and NM0. Among them, the source and substrate of PM0, PM5 and the substrate of PM4 are all connected to VDD, and the gate of PM4 and PM0 are connected to ground. , The drain of PM0 is connected to the source of PM4, the drain of PM4 is connected to the gate of PM5 and the gate of NM0, and the source and drain of NM0 are connected to the ground.

[0024] The working principle of the start-up circuit is: when the overall circuit is just powered on, PM0, PM4, PM5 are turned on, PM5 drain voltage rises, so that NM1 is turned on, the reference core circuit works normally, NM0 gate voltage gradual...

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Abstract

The invention discloses a complementary metal oxide semiconductor (CMOS) segmented high-order temperature compensated sub-threshold reference voltage source, which comprises a starting circuit, a reference core circuit, a digital temperature detection circuit and a segmented high-order temperature compensation circuit. Current mode reference voltage is obtained by superimposing complementary to absolute temperature (CTAT) current generated by the offset of gate-source voltage VGS of sub-threshold N-channel metal oxide semiconductor (NMOS) field effect transistors and proportional to absolute temperature (PTAT) compensation current generated by gate-source voltage differences of a sub-threshold P-channel metal oxide semiconductor (PMOS) field effect transistors, and is coupled into final output reference voltage by the segmented high-order temperature compensation circuit, so high-order temperature compensated reference voltage is obtained. The sub-threshold reference voltage source has a relatively lower temperature coefficient and a relatively higher power supply rejection ratio, and the temperature coefficient of 5.2ppm / DEG C is obtained through emulation by using a semiconductor manufacturing international corporation (SMIC) 65nm standard process database.

Description

Technical field [0001] The invention relates to a reference voltage source, in particular to a sub-threshold reference voltage source of CMOS segmented high-order temperature compensation, and belongs to the technical field of power supplies. Background technique [0002] With the further complexity of the circuit system structure, higher precision and speed requirements are put forward for the basic modules of analog circuits, such as A / D, D / A converters, filters, and phase-locked loops. This means that the system Higher requirements are put forward for the reference voltage source module. In addition, the reference voltage source is a key circuit unit in the voltage regulator, and it is also an indispensable part of the DC / DC converter. The stability of the reference voltage source directly determines the performance of the circuit. The commonly used reference voltage source is the bandgap reference source using BJT first proposed by Widlar in 1971. It uses the BJT's base-emi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G05F1/56
Inventor 孙伟锋杨淼徐申高庆王益峰陆生礼时龙兴
Owner SOUTHEAST UNIV
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