Nitrogen-containing functional group substituted alkoxy rare-earth metal lanthanum and gadolinium complex and synthetic method and application thereof

A nitrogen-containing functional group and alkoxy rare earth technology, applied in the application field of ALD precursors in the preparation of high-K materials, to achieve the effects of good flatness, easy preparation, and reasonable price
CN102432631BInactive Publication Date: 2014-07-23NANJING UNIV OF AERONAUTICS & ASTRONAUTICS
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
NANJING UNIV OF AERONAUTICS & ASTRONAUTICS
Publication Date
2014-07-23
Estimated Expiration
Not applicable · inactive patent

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Abstract

The invention discloses a nitrogen-containing functional group substituted alkoxy rare-earth metal lanthanum and gadolinium complex. The complex is shown as a formula in the specifications. The nitrogen-containing functional group substituted alkoxy rare-earth metal lanthanum and gadolinium complex is applied to an atomic layer deposition technology, has the advantages of adequate volatility, appropriate heat stability, adequate reaction activity, substrate matching property, appropriate price, low toxicity and the like, and is easy to prepare.
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Description

technical field

[0001] The present invention relates to metal-organic complexes and their synthesis methods, in particular to a series of nitrogen-containing functional group-substituted alkoxy rare earth metal lanthanum and gadolinium complexes and their synthesis methods and their application as ALD precursors in the preparation of high-K materials . technical background

[0002] With the rapid development of integrated circuits, SiO 2 As a traditional gate dielectric, it cannot meet the high integration requirements of metal-oxide-semiconductor field effect transistor (MOSFET) devices, and a new high-K material is needed to replace the traditional SiO 2 , which requires comprehensive consideration of the following aspects: ① has high dielectric constant, high potential barrier and energy gap; ② has good thermal stability on Si; ③ amorphous gate dielectric is more ideal; ④ has Good interface quality; ⑤ compatible with Si-based gate; ⑥ compatibility of processing technolo...

Claims

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