Design method of memory capacity variable SAS-RAID (Serial Attached SCSI (Small Computer System Interface)-Redundant Array of Independent Disk) card
A technology with variable memory capacity, which is applied in the field of computer communication, can solve problems such as waste and rising data management investment costs, and achieve the effects of cost saving, good promotion of use value, and improvement of flexibility
Inactive Publication Date: 2012-05-02
LANGCHAO ELECTRONIC INFORMATION IND CO LTD
View PDF3 Cites 1 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
[0003] In the previous SAS-RAID card application, users generally installed the SAS-RAID card external card with fixed cache capacity directly in the server system. One of the important indicators that affect transmission performance. At this time, if you want to increase the cache capacity and improve performance, you can only replace the SAS-RAID card. The user's investment in data management will greatly increase and cause unnecessary waste
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0014] The method of the present invention will be described in detail below with reference to the accompanying drawings.
[0015] The design method of the variable memory capacity SAS-RAID card of the present invention is based on the theoretical support point of memory particles to solve the problem of the cache capacity of the SAS-RAID card by different systems. The specific content of the invention can be realized by the following steps:
[0016] 1) According to the memory capacity specification, connect the 15 address line of the DDR2 memory chip to the SAS-RAID main controller, so that the maximum memory capacity specification supported by the card can reach 1GB;
[0017] 2) The total memory capacity of the card is realized by five memory particles, one of which is used for ECC verification, and the five memory particles are connected to the SAS-RAID card through the gold finger slot;
[0018] 3) According to the capacity specification of the selected single memory granu...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
The invention provides a design method of a memory capacity variable SAS-RAID (Serial Attached SCSI (Small Computer System Interface)-Redundant Array of Independent Disk) card. DDR2 (Double Data Rate 2) memory particle configuration of a system reaches an optimal configuration by adjusting DDR2 memory particles and replacing different DDR2 memory particle configurations. The design method comprises the following concrete steps of: (1), connecting a 15th address line of the DDR2 memory particles to an SAS-RAID master controller according to the memory capacity specification, so that the memory capacity specification supported by the card reaches 1GN at most; (2) connecting five memory particles with the SAS-RAID card by using a gold finger slot way, wherein the total memory capacity of the card is realized by using the five memory particles, and one of the memory particles is used for ECC (Error Correction Code) checking; (3) inserting corresponding memory particles to slot positions of the five gold finger slots according to the capacity specification of the selected single memory particle and the data caching capacity requirement of a user on the SAS-RAID card; and (4) connecting the 15 address line of the DDR 2 memory particles to the SAS-RAID master controller, wherein the highest address line, namely the 15th address line, is increased, and a corresponding connecting line needs to be corrected in the process of manufacturing a PCB (Printed Circuit Board) panel.
Description
technical field [0001] The invention relates to the field of computer communication, and specifically uses a design method of variable memory capacity of a SAS-RAID card to solve the problem of the buffer capacity of the SAS-RAID card in different systems, which greatly facilitates the upgrade of the buffer capacity and performance of the SAS-RAID card promote. Background technique [0002] Today's server products and customer application requirements are constantly changing, and RAID is required to form a disk array to ensure long-term uninterrupted operation and stability of the server. In order to ensure the stable transmission of system data, most SAS-RAID cards are integrated with memory chips. Cache area, the current mainstream SAS-RAID card, its data cache area, that is, the memory capacity is between 128MB and 1GB, so in the functional test of the server system level, the size of the SAS-RAID card data cache area, that is, the memory capacity One of the very importa...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Applications(China)
IPC IPC(8): G11C29/54
Inventor 刘涛
Owner LANGCHAO ELECTRONIC INFORMATION IND CO LTD