Method for manufacturing multilayer metal-silicon nitride-metal capacitor
A multi-layer metal and manufacturing method technology, applied in the field of capacitance, can solve problems such as breakdown voltage, leakage current and electrical characteristics that are not satisfactory
Active Publication Date: 2012-05-09
SHANGHAI HUALI MICROELECTRONICS CORP
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Problems solved by technology
[0024] However, the breakdown voltage, leakage current and other electrical characteristics of current metal-silicon nitride-metal (MOM) capacitors are not satisfactory.
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[0074] The present invention will be described in further detail below in conjunction with the accompanying drawings and specific embodiments. described here
[0075] The specific embodiments are only used to explain the present invention, and are not used to limit the protection scope of the present invention.
[0076] refer to Figure 1 to Figure 5 , the fabrication of a hybrid layer in a multilayer metal-silicon nitride-metal capacitor
[0077] program schematic diagram. The present invention sequentially forms a mixed layer of multi-layer low-k value medium and silicon nitride on the substrate from bottom to top.
[0078] The formation of each mixed layer includes the following steps:
[0079] Step 1, deposit high-k value silicon nitride 102, such as figure 1 shown;
[0080] Step 2, etching the high-k value silicon nitride 102 stops at the bottom of the high-k value silicon nitride 102 to form several segments
[0081] High-k silicon nitride 102, figure 2 A section ...
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Abstract
The invention relates to a multilayer metal-silicon nitride-metal capacitor which is characterized in that: the multilayer metal-silicon nitride-metal capacitor is provided with a plurality of layers of mixed layers of k value mediums and silicon nitride; each layer comprises a plurality of low k value medium areas and a plurality of high k value silicon nitride area alternately distributed in the horizontal direction; each low k value medium area is provided with a first metal trough and metal is filled in the first metal trough; and each high k value silicon nitride is provided with a plurality of second metal troughs and the metal is filled in all of the plurality of the second metal troughs. In the multilayer metal-silicon nitride-metal capacitor, the capacitance of the capacitor among layers and in layers is effectively improved by improving the k value of a dielectric medium of the capacitor among the layers and in the layers. The electrical characteristics of breakdown voltage, leakage current, and the like of the metal-silicon nitride-metal (MOM) capacitor and the electrical uniformity among each part are effectively improved by improving the performance of the high k value silicon nitride.
Description
technical field [0001] The invention relates to a capacitor in an integrated circuit, in particular to a multilayer metal-silicon nitride-metal capacitor [0002] Content production method. Background technique [0003] Capacitors are important components in integrated circuits and are widely used in memory, microwave, radio frequency, smart [0004] Energy card, high voltage and filter chips. The widely used capacitor structure in the chip is parallel to the silicon substrate [0005] metal-insulator-metal (MIM). Among them, the metal is copper, which is easy to be compatible with the metal interconnection process, [0006] Aluminum, etc., and the insulator is a dielectric material with a high dielectric constant (k) such as silicon nitride and silicon oxide. [0007] In the prior art, improving the performance of high-k dielectric materials is one of the main methods to improve the performance of capacitors [0008] one. For example, Chinese patent CN101577227A intr...
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IPC IPC(8): H01L21/02
Inventor 毛智彪胡友存徐强
Owner SHANGHAI HUALI MICROELECTRONICS CORP