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Method used for improving dual contact-etch-stop-layer crossover region contact etch

A technology of through-hole etching and overlapping regions, which is applied in the direction of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., and can solve the problem that through-holes cannot be fully opened

Active Publication Date: 2012-05-09
SHANGHAI HUALI MICROELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0008] The invention discloses a method for improving the through-hole etching in the overlapping area of ​​the double through-hole etching stop layer, which is used to solve the problem that the through-holes formed on the overlapping area cannot be fully opened in the prior art

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  • Method used for improving dual contact-etch-stop-layer crossover region contact etch
  • Method used for improving dual contact-etch-stop-layer crossover region contact etch
  • Method used for improving dual contact-etch-stop-layer crossover region contact etch

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Embodiment Construction

[0048] The specific embodiment of the present invention will be further described below in conjunction with accompanying drawing:

[0049] Figure 2A is a schematic diagram of depositing in the channel to form the first stress film in the prior art, please refer to Figure 2A , a method for improving via hole etching in an overlapping region of a double via etch stop layer, at least one first transistor and at least one second transistor are formed on a substrate 10, and between the first transistor and the second transistor A shallow trench region 101 is formed between them; a first protective film layer and a first stress film layer 301 are sequentially deposited on the substrate 10, and the first protective mold layer and the first stress film layer 301 combine the first transistor and the first stress film layer The two transistors and the shallow trench region 101 are simultaneously covered; Figure 2B It is a schematic diagram of removing part of the first stress film ...

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Abstract

The invention relates to a method for improving a dual contact-etch-stop-layer crossover region contact etch, and solves the problem that a contact formed on a crossover region in the prior art can not fully open. The method is characterized in that after a dual contact-etch-stop-layer process is finished, a dilute hydrofluoric acid is used and an ultrasonic cleaning method is adopted to remove an upper layer silica protective film and an upper layer silicon nitride stress film; and then an etching method with different selection ratios is adopted to realize the technical effect of simultaneously opening contacts of a common region and the crossover region.

Description

technical field [0001] The invention relates to a semiconductor process, in particular to a method for improving the etching of the through hole in the overlapping area of ​​the double through hole etching stop layer. Background technique [0002] With the development of semiconductor-related manufacturing processes and the trend of reducing the size of integrated circuit chips, the role of stress engineering in semiconductor technology and semiconductor device performance is becoming more and more obvious. Stress engineering is widely used to improve the carrier mobility of transistors. on the semiconductor device. Especially applied to some special chip types, such as Complementary Metal-Oxide-Semiconductor (CMOS, Complementary Metal-Oxide-Semiconductor) devices. [0003] Usually, there are various kinds of stress in the complex manufacturing process of CMOS devices, and the stress remaining in the channel region of the device has a greater impact on the performance o...

Claims

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Application Information

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IPC IPC(8): H01L21/768H01L21/311
Inventor 俞柳江
Owner SHANGHAI HUALI MICROELECTRONICS CORP