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Grinding wheel

A grinding wheel and abrasive tool technology, applied in the direction of abrasives, bonded grinding wheels, electrical components, etc., can solve problems such as quality degradation and cracks

Inactive Publication Date: 2012-05-16
DISCO CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] However, if the free end of the annular base of the grinding wheel is annularly equipped with a plurality of grinding tools with diamond abrasive grains as the main component, and the grinding wheel is used to grind especially the sapphire wafer, there may be There is such a problem that cracks (mushire) occur on the ground surface, and cracks will occur when the sapphire wafer is further ground to a thickness of 100 μm or less, resulting in a significant decrease in quality

Method used

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Examples

Experimental program
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Effect test

Embodiment 1

[0050] To the resin bond composed of phenolic resin, boron-doped diamond abrasive grains with an average particle size of 5 μm are mixed in a volume ratio of 10% to 20%, and the average particle size of the filler is mixed in a volume ratio of 35% to 25%. SiC (Silicon Carbide) particles of 1 μm and formed into a rectangular parallelepiped shape. The molded body was sintered at a sintering temperature of 180° C. for about 8 hours to form a resin bonded abrasive tool.

[0051] A plurality of such resin bonded abrasive tools are secured to the free end of the annular base 24 to form a grinding wheel. The grinding wheel was assembled to the wheel base 20, and a sapphire wafer with a thickness of 300 μm was ground under the processing conditions that the spindle speed was 1000 rpm, the chuck table speed was 500 rpm, and the grinding wheel feed rate was 0.2 μm / sec. As a result, the sapphire wafer could be ground to a thickness of 90 μm without cracking or cracking, and the ground s...

Embodiment 2

[0054] To the metal bond with bronze as the main component and mixed with a small amount of cobalt and nickel, boron-doped diamond abrasive grains with an average particle size of 5 μm are mixed in a volume ratio of 10% to 20%, and the volume ratio is 35% to 35%. 25% of SiC (silicon carbide) particles having an average particle diameter of 1 μm were mixed as a filler, and formed into a rectangular parallelepiped shape. This molded body was sintered at a sintering temperature of 700° C. for about 1 hour to manufacture a metal bonded abrasive tool.

[0055] A plurality of such metal-bonded abrasive tools are annularly secured to the free end of the annular base 24 to form a grinding wheel. The grinding wheel was assembled to the wheel base 20, and the sapphire wafer was ground under the same processing conditions as in Example 1. As a result, the sapphire wafer could be ground to a thickness of 90 μm without crushing and cracking, and the ground surface could be finished. for t...

Embodiment 3

[0058] To the vitrified bond with silicon dioxide as the main component and mixed with a small amount of feldspar, boron-doped diamond abrasive grains with an average particle size of 5 μm are mixed in a volume ratio of 10% to 20%, and boron-doped diamond abrasive grains are mixed in a volume ratio of 35%. ~25% of SiC (silicon carbide) particles with an average particle diameter of 1 μm were mixed as a filler and formed into a rectangular parallelepiped shape. The molded body was sintered at a sintering temperature of 700° C. for about 1 hour to form a vitrified bonded abrasive tool.

[0059] A plurality of such grinding tools are secured to the free end of the annular base 24 to form a grinding wheel. The grinding wheel was assembled to the wheel base 20, and the sapphire wafer was ground under the same conditions as in Example 1. As a result, the sapphire wafer could be ground to a thickness of 90 μm without crushing and cracking, and the ground surface could be finished as ...

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Abstract

The invention provides a grinding wheel, which can grind hard brittle materials into a desired thickness without generating cracks on grinding surfaces. The grinding wheel used for grinding workpieces is characterized by comprising an annular base. The annular base is provided with a wheel seat assembly surface arranged on a wheel seat, and a plurality of grinding tools. The grinding tools are annularly arranged on the free end of the annular base. The plurality of grinding tools contain boron doped diamond grains.

Description

technical field [0001] The invention relates to a grinding wheel suitable for grinding hard and brittle materials. Background technique [0002] A large number of devices such as IC (Integrated Circuit: Integrated Circuit) and LSI (Large Scale Integration: Large Scale Integrated Circuit) are formed on the surface, and each device is divided by predetermined division lines (spacers) formed in a grid pattern. The opened silicon wafer is divided into individual devices by cutting the dividing line with a dicing device equipped with a cutting tool, and the divided devices are used in electrical equipment such as mobile phones and personal computers. [0003] In addition, regarding a sapphire wafer on which a large number of light-emitting devices such as LEDs (light-emitting diodes) and LDs (laser diodes) are formed on the surface, and each light-emitting device is divided by a predetermined division line (separation lane), it uses laser irradiation The light-emitting device is...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B24D3/00B24D3/32B24D3/18B24D3/10B24D7/00
CPCB24D3/06B24D3/14B24D3/28H01L21/304
Inventor 马路良吾大岛龙司
Owner DISCO CORP