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Plasma treatment device and plasma treatment method

A plasma and processing device technology, applied in the field of plasma processing devices, can solve the problems of inability to control the common gas and the dissociation of the added gas in various ways, and achieve the effect of improving uniformity

Active Publication Date: 2012-05-23
TOKYO ELECTRON LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In addition, since both the common gas and the additive gas are introduced into the upper electrode, there is a problem that the dissociation of the common gas and the additive gas cannot be controlled in various ways

Method used

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  • Plasma treatment device and plasma treatment method
  • Plasma treatment device and plasma treatment method
  • Plasma treatment device and plasma treatment method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0072] The difference in the etching rate between the central portion and the peripheral portion of the surface of the wafer W with respect to the introduction amount ratio of the shunt 51 was examined. In addition, as the wafer W, a Si wafer with a diameter of 300 mm was used to etch the Poly-Si film formed on the surface.

Embodiment 2

[0095] When using the CF 4 Gas and CHF 3 The CF 4 Gas and CHF 3 Gas mixing ratio (CF 4 Gas / CHF 3 gas) and CD. Figure 10 Indicates the etched shape of the SiN film on the wafer surface. CF 4 Gas and CHF 3 Gas mixing ratio (CF 4 Gas / CHF 3 Gas) and CD are the results in Table 5 below.

[0096] table 5

[0097]

[0098] In this example, if CF 4 Gas and CHF 3 Gas mixing ratio (CF 4 Gas / CHF 3 Gas) becomes larger, and the tendency for CD to become smaller can be seen. As can be seen from the results of Example 1, by changing the CF in the process gas 4 Gas and CHF 3 The mixing ratio of the gas can control the CD when etching the SiN film.

Embodiment 3

[0100] Next, the processing gas introduced into the center of the wafer was investigated (using CF 4 Gas and CHF 3 Influence of the ratio of the introduced amount of the gas as the raw material gas (processing gas) to the introduced amount of the processed gas introduced into the peripheral portion of the wafer. In addition, the mixing ratio (CF 4 Gas / CHF 3 gas) is the same. like Figure 11 As shown, in the case of reducing the amount of processing gas introduced at the center of the wafer and increasing the amount of processing gas introduced at the periphery of the wafer, in the center of the wafer, the etched shape of the SiN film on the wafer surface is such that the side faces closer to the bottom. In the tapered shape with wider sides (a), the side surface of the SiN film on the wafer surface is etched approximately vertically at the peripheral portion of the wafer (b). On the other hand, if Figure 12 As shown, when increasing the amount of processing gas introduc...

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PUM

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Abstract

Provided is a plasma treatment device that improves the uniformity of plasma treatment of substrate surfaces. In the provided plasma treatment device (1), in which a treatment gas introduced into a treatment container (2) is converted to plasma and a substrate (W) is treated, the ratio between the amount of treatment gas introduced to the central portion of the substrate (W) in the treatment container (2) and the amount of treatment gas introduced to the periphery of the substrate (W) in the treatment container (2) is varied over the course of the plasma treatment. This makes it possible to reduce variations in etching rate (ER) and the like between the central portion and the periphery of the substrate (W). This improves the uniformity of plasma treatment of the substrate (W) surface.

Description

technical field [0001] The invention relates to a plasma processing device and a plasma processing method used in semiconductor manufacturing. Background technique [0002] Conventionally, in the field of manufacturing semiconductor devices, a method of performing processes such as etching and film formation using plasma has been employed. As one of them, there is known a RLSA (Radial Line Slot Antenna) type plasma processing apparatus ( For example, refer to Patent Document 1). This RLSA type plasma processing apparatus has the advantage of being able to uniformly form high-density and low-electron-temperature plasma, and thereby uniformly and rapidly perform plasma processing on a large semiconductor wafer. Furthermore, as an example of plasma processing, a process of etching the surface of a substrate using HBr gas is known. In addition, as an example of another plasma treatment, it is known to use 4 Gas and CHF 3 The processing gas of the gas is used to etch the SiN...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/3065
CPCH01L21/32137H01L21/31116H01J37/3244H01L21/67069H01J37/32449H01L21/3065C23C16/455C23C16/45523C23C16/45561H01J2237/334H01L21/30655H01L21/31138
Inventor 小津俊久松本直树塚本刚史高井和人
Owner TOKYO ELECTRON LTD