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Large-signal equivalent circuit model of Schottky varactor and parameter extracting method thereof

A technology of equivalent circuit model and varactor, which is applied in circuits, electrical components, electrical digital data processing, etc., can solve the problems of lack of large signal models and affecting the application of microwave nonlinear circuits, etc.

Active Publication Date: 2013-09-25
SOI MICRO CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The present invention aims at the lack of accurate large-signal model of the Schottky varactor with mesa structure, which seriously affects its application in microwave nonlinear circuits, and provides a large-signal model of Schottky varactor with mesa structure Equivalent circuit model and its reference method

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  • Large-signal equivalent circuit model of Schottky varactor and parameter extracting method thereof
  • Large-signal equivalent circuit model of Schottky varactor and parameter extracting method thereof
  • Large-signal equivalent circuit model of Schottky varactor and parameter extracting method thereof

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Embodiment Construction

[0045] The principles and features of the present invention are described below in conjunction with the accompanying drawings, and the examples given are only used to explain the present invention, and are not intended to limit the scope of the present invention.

[0046] figure 2 It is a structural schematic diagram of a large-signal equivalent circuit model of a mesa structure Schottky varactor in an embodiment of the present invention. Such as figure 2 As shown, the large signal model includes the parasitic capacitance 20 of the anode PAD to ground, the parasitic inductance 21 of the lead wire, the parasitic resistance 22 in series, the nonlinear capacitance 23 of the junction region, the nonlinear resistance 24 of the junction region and the parasitic capacitance 25 of the cathode PAD to the ground ; The parasitic capacitance 20 of the anode PAD to ground is connected in series with the parasitic inductance 21 of the lead wire, the parasitic inductance 21 of the lead wi...

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Abstract

The invention relates to a large-signal equivalent circuit model of a Schottky varactor and a parameter extracting method thereof, which belong to the technical field of varactors in microwave devices. The model comprises an anode PAD grounded parasitic capacitor, a lead parasitic inductor, a serial parasitic resistor, a nonlinear junction capacitor, a nonlinear junction resistor and a cathode PAD grounded parasitic capacitor, wherein the anode PAD grounded parasitic capacitor and the lead parasitic inductor are connected in series; the lead parasitic inductor and the serial parasitic resistor are connected in series; and the nonlinear junction resistor and the nonlinear junction capacitor are connected in parallel and then connected in series between the serial parasitic resistor and the cathode PAD grounded parasitic capacitor. The large-signal equivalent circuit model of the Schottky varactor with a mesa structure is wide in suitable frequency and bias voltage range and is applicable to nonlinear microwave and milimeter wave circuit design; the parameter extracting method for the model is accurate, simple, convenient and quick; and by means of the parameter extracting method, the design cycle of a circuit can be greatly shortened and the design precision of the circuit can be improved.

Description

technical field [0001] The present invention relates to a large-signal equivalent circuit model of a Schottky varactor and a reference raising method thereof, in particular to a large-signal equivalent circuit model of a mesa-structure Schottky varactor and a reference raising method thereof, belonging to The technical field of varactors in microwave devices. Background technique [0002] A Schottky varactor is a commonly used microwave device. Because of its C-V nonlinear relationship, it is widely used in the design of microwave nonlinear circuits, such as voltage-controlled oscillators, phase shifters, mixers, frequency multipliers, etc. [0003] figure 1 It is a structural schematic diagram of a Schottky varactor with a mesa structure in the prior art. Such as figure 1 As shown, an N+ region 11 is provided on the insulating substrate 10, an N region 12 is provided on the N+ region 11, a dielectric layer 13 is provided on the insulating substrate 10, the N+ region 11 ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G06F17/50H01L29/92
Inventor 董军荣黄杰田超杨浩张海英
Owner SOI MICRO CO LTD