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Shared electrostatic discharge protection for integrated circuit output drivers

An output driver, integrated circuit technology, applied in circuits, electrical solid devices, electrical components, etc., can solve the problem of NFET components not functioning

Active Publication Date: 2012-05-30
XILINX INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Generally speaking, the above-mentioned parasitic BJT is not a high-efficiency device, so it has no role in the normal operation of the NFET device

Method used

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  • Shared electrostatic discharge protection for integrated circuit output drivers
  • Shared electrostatic discharge protection for integrated circuit output drivers
  • Shared electrostatic discharge protection for integrated circuit output drivers

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Embodiment Construction

[0022]The scope of the patent application defining the features of the novel invention is appended to this specification. It is believed that the invention will be better understood through the description of the accompanying drawings. Detailed embodiments of the present invention are disclosed herein as specified, it being understood that these disclosed embodiments are merely exemplary of the invention which may be embodied in various forms. Accordingly, structural and functional details disclosed in this specification are not to be interpreted as limiting, but merely as a basis for claims and as a basis for teaching those skilled in the art to employ the present invention in any practically appropriate detail. A representative basis for an inventive configuration. In addition, the terms and words used in the description are not intended to be limiting, but to provide an understandable explanation of the embodiments of the present invention.

[0023] Embodiments disclosed i...

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Abstract

A system for protecting metal oxide semiconductor field effect transistor (MOSFET) output drivers within an integrated circuit (IC) from an electrostatic discharge (ESD) includes a first MOSFET output driver and a second MOSFET output driver positioned within a common IC diffusion material (205). The system includes a contact ring (225, 325, 420) coupled to the common IC diffusion material and arranged along an outer edge of a perimeter surrounding the MOSFET output drivers. A centroid of each MOSFET output driver is common with a centroid (385, 460) of the perimeter surrounding both MOSFET output drivers. Each MOSFET output driver has a value of Rsub (substrate resistance 275 and 280) that initiates bipolar snapback in the MOSFET output driver at which an ESD event occurs. The value of Rsub depends upon a composite distance from the centroid of each MOSFET output driver to the contact ring.

Description

technical field [0001] Embodiments disclosed in this specification relate to integrated circuit devices (ICs). More specifically, the embodiments relate to electrostatic discharge protection of output drivers within ICs. Background technique [0002] An electrostatic discharge (ESD) event is a temporary abrupt flow of electrical current between two objects at different electrical potentials. ESD can sometimes be a serious problem for integrated circuit devices (ICs) because the large-scale potential changes and current flow generated during an ESD event can damage silicon junctions as well as oxide insulators. Damage to an IC by an ESD event may degrade the performance of a silicon-based IC, even if it does not destroy the IC and render it inoperable. [0003] Charge growth in an integrated circuit can occur for a variety of reasons, many of which occur during the manufacture, assembly, testing, or use of the IC. Therefore, ICs can be accidentally exposed to ESD events bo...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/02
CPCH01L27/0277H01L27/04
Inventor 理查·C·李詹姆士·卡普
Owner XILINX INC