Photomask, conducting wire manufacturing method of flat display panel and conducting wire structure of flat display panel

Abstract

The invention provides a photomask, comprising a transparent substrate, a plurality of shading patterns and at least one transparent area. The shading patterns possess at least one transparent slit, and the edges of the shading patterns are parallel. Each shading pattern comprises a first width, the sum of the first width and the spacing between two adjacent shading patterns is less than or equal to 12 micrometer. The invention also provides a method for manufacturing the conducting wire of the flat display panel by utilizing the above photomask and a conducting wire structure of the flat display panel. The conducting wire structure of the flat display panel comprises a plurality of conducting wires, the sum of the width of each conducting wire and the spacing between every two conducting wires is less than or equal to 12 micrometer.

Description

technical field [0001] The present invention relates to a photomask, a method for making wires and a wire structure, in particular to a photomask applicable to making wires for flat display panels, a method for making wires for flat display panels, and a method for making wires for flat display panels. wire structure. Background technique [0002] In the known technology related to the flat display panel, many wires are disposed in the surrounding area other than the display area of ​​the flat display panel. Signals can be transmitted from external components such as driver ICs to each display unit in the display area through the wires to present various display images. [0003] The current method used in the industry to form wires is generally to coat a photoresist layer on the conductive material first, and then form a photoresist pattern through a photomask with a pattern and an exposure and development process. The conductive material that is not covered by the photores...

AI Technical Summary

Problems solved by technology

The wire itself is limited by the material impedance and the overall electrical requirements, so it must have a certain line width, and the distance between the wires is limited by the resolution limit of the general photomask and exposure machine, so it cannot be reduced as much as possible.

For example, when the resolution of the general exposure machine is about 3.5 to 4.0 microns, if the pitch of the light-shielding pattern on the photomask used with it is less than 3.5 microns, the photoresist may not be completely exposed, resulting in residual phenomenon

Therefore, under the matching of the known photomask and exposure machine, the distance between the wires cannot be further reduced

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