Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Methanol gas sensor based on organic filter transistor and preparation method of methanol gas sensor

A formaldehyde gas and organic thin film technology, applied in the direction of instruments, scientific instruments, measuring devices, etc., can solve the problems of harsh preparation environment, high preparation cost, low sensitivity, etc., and achieve suitable for large-scale industrial production, large response current, low cost effect

Inactive Publication Date: 2012-06-20
UNIV OF ELECTRONICS SCI & TECH OF CHINA
View PDF12 Cites 26 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The technical problem to be solved by the present invention is that the organic transistor for detecting formaldehyde in the prior art has the problems of harsh preparation environment, low sensitivity and high preparation cost due to the structure of the detection layer.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Methanol gas sensor based on organic filter transistor and preparation method of methanol gas sensor
  • Methanol gas sensor based on organic filter transistor and preparation method of methanol gas sensor
  • Methanol gas sensor based on organic filter transistor and preparation method of methanol gas sensor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0038] Device structure such as figure 1 As shown, it is a bottom-gate top-contact structure. The material and thickness of each layer of the device are as follows: the substrate 1 is glass, the gate electrode 2 is ITO with a thickness of 180 nm, the gate insulating layer 3 is PMMA with a thickness of 500 nm, and the formaldehyde gas organic semiconductor detection layer 4 is pentacene , the thickness is 25nm, the source electrode 5 and the drain electrode 6 are both Au, the thickness is 50nm.

[0039] Its preparation method is as follows:

[0040] ① Thoroughly clean the glass substrate 1 on which the gate electrode ITO has been sputtered, and dry it with dry nitrogen after cleaning;

[0041] ② Preparing PMMA film on ITO by spin coating method to form gate insulating layer 3;

[0042] ③Heating and baking the spin-coated PMMA film;

[0043] ④ Vacuum evaporation is used to prepare the pentacene gas organic semiconductor detection layer 4;

[0044] ⑤ Prepare the source elect...

Embodiment 2

[0046] The structure of the sensor is as figure 1 shown. The material and thickness of each layer of the sensor are: substrate 1 is glass, gate electrode 2 is ITO with a thickness of 180 nm, gate insulating layer 3 is PS with a thickness of 20 nm, formaldehyde gas organic semiconductor detection layer 4 is pentacene , with a thickness of 25 nm, and the source electrode 5 and the drain electrode 6 are both Au with a thickness of 50 nm.

[0047] The preparation process is similar to Example 1.

Embodiment 3

[0049] The sensor structure is as figure 1 shown. The material and thickness of each layer of the sensor are as follows: the substrate 1 is glass, the gate electrode 2 is ITO with a thickness of 180 nm, the gate insulating layer 3 is PVA with a thickness of 2000 nm, and the formaldehyde gas organic semiconductor detection layer 4 is pentacene , the thickness is 25nm, the source electrode 5 and the drain electrode 6 are both Au, the thickness is 50nm.

[0050] The preparation process is similar to Example 1.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a methanol gas sensor based on an organic filter transistor and a preparation method of the methanol gas sensor, belonging to the field of gas detection sensors, and solving the problems of rigorous preparation environment requirements, poor sensitivity and high preparation cost, caused by detection layer structure reasons, of an organic transistor for detecting methanol in the prior art. The methanol gas sensor comprises a substrate, a gate electrode arranged on the substrate, a gate insulation layer arranged on the gate electrode, as well as a source electrode and a drain electrode arranged on the gate insulation layer; the source electrode is connected with the drain electrode through a methanol gas organic semiconductor detection layer; and the methanol gas organic semiconductor detection layer is made of organic materials of benzo and benzo derivates. The methanol gas sensor disclosed by the invention is mainly used for detecting the methanol in an environment.

Description

technical field [0001] The invention belongs to the field of gas detection sensors, and in particular relates to a formaldehyde gas sensor based on an organic thin film transistor and a preparation method thereof. Background technique [0002] Formaldehyde, also known as formaldehyde, is a colorless volatile organic compound with a strong pungent odor. Its health hazards to the human body are mainly manifested in stimulating the eyes and respiratory tract, causing abnormalities in the lungs, liver and human immune function. In 1995, formaldehyde was identified as a suspected carcinogen by the International Agency for Research on Cancer (IARC). In 2004, formaldehyde was identified as a first-class carcinogen by the International Agency for Research on Cancer (IARC). However, ceilings, particle boards, density boards and other man-made panels, adhesives, wallpapers and other decoration materials in people's decoration of houses, chemical fiber textiles, disinfectants and oth...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G01N27/00
Inventor 于军胜曾红娟于欣格张霖蒋亚东
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com