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Method for selectively depositing atom layer to film by spray head device

An atomic layer deposition and selective technology, applied in the coating, metal material coating process, gaseous chemical plating and other directions, can solve the problem of unable to grow thin film, can not form the region selection and other problems, to save photoresist, The effect of saving glue and saving expensive costs

Active Publication Date: 2012-06-27
PIOTECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This method mainly solves the technical problems that the existing technology cannot select the area where the film is formed on the same substrate and cannot directly grow the film on the substrate according to the required circuit.

Method used

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  • Method for selectively depositing atom layer to film by spray head device
  • Method for selectively depositing atom layer to film by spray head device
  • Method for selectively depositing atom layer to film by spray head device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0019] refer to figure 1 , a device used in the method of selective atomic layer deposition film formation with a nozzle device, the device includes a pretreatment reaction chamber 1, the bottom of the chamber 1 is equipped with a substrate 6, and the surface treatment source 5 passes through the delivery pipeline 4 and the source valve 3 In communication, the source valve 3 is connected to one end of the manipulator 2, and the other end of the manipulator 2 is equipped with a nozzle 7.

[0020] The method first sprays the surface treatment material source (alcohol) onto the surface of the substrate with a nozzle according to the designed circuit trajectory, and then passes the substrate into the precursor trimethylaluminum (Al(CH 3 ) 3 ) and precursor water (H 2 O), then Al is formed in the region of the substrate A 2 o 3 thin film, no thin film grows in area B.

[0021] Its specific methods and steps are:

[0022] 1. Clean the substrate and put it into the pretreatment...

Embodiment 2

[0033] Use the nozzle to spray the surface treatment material source on the surface of the substrate according to the designed circuit to make the circuit area and other areas have different conductivity. Access (CH 3 CH 2 ) 2 M (M represents a metal element) or M-N-(CH 3 ) 2 (M stands for metal elements) two precursors, these two precursors tend to adsorb on the surface area of ​​the substrate with high conductivity, and grow a film on the surface, while the non-conductive surface area does not undergo any reaction, thus A method for realizing selective atomic layer deposition film formation by using a shower head device.

Embodiment 3

[0035] Use a nozzle to spray a polarized surface treatment material source on the surface of the substrate according to the designed circuit, so that the circuit area and other areas have different polarities. Access M-O-CH 3 (M stands for metal element) or M-OC 2 h 5 (M represents a metal element) two precursors, these two precursors tend to be adsorbed on the polar surface area of ​​the substrate, and do not react with the non-polar surface area, so they react to form a film in the polar line area , to realize the method of selective atomic layer deposition film formation with shower head device.

[0036]The method of using nozzle device to realize selective atomic layer deposition film formation can be controlled by computer to move the nozzle or the substrate, use the nozzle device to pretreat the surface of the substrate, and directly spray the required lines on the surface of the substrate, so that different regions have different reaction characteristics . By select...

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Abstract

The invention discloses a method for selectively depositing an atom layer to a film by a spray head device, belonging to the field of film coating. The invention mainly aims at solving the technical problems of incapability of selecting the film forming region on the same substrate and incapability of directly growing a thin film on the substrate according to a necessary path in the prior art. The method comprises the steps of: firstly, performing a surface treatment on the surface of the substrate according to a designed path by a spray head controlled by a computer to generate the following characteristics on the surface of the path region: a chemical bond different from other regions, or different electrical conductivity, or different surface polarity, or different surface stress, or other physical or chemical characteristic difference. The difference enables the substrate to react to generate different thin films while touching a precursor. In order to improve the efficiency of the spray coating path, the device can comprise one spray head and a plurality of passages or a plurality of spray heads and a plurality of passages. The method of the invention has the advantages of novel and unique conception and simple preparation method. The method has a convenient and extensive application in such fields as chip manufacture, battery, solar energy, military, engine and medical treatment, etc.

Description

technical field [0001] The invention relates to a film forming method of atomic layer vapor deposition, in particular to a selective atomic layer vapor deposition film forming method, which belongs to the field of thin film coating. Background technique [0002] Atomic layer deposition (ALD) technology is the most cutting-edge thin film deposition technology. Its principle is to alternately pass gas-phase precursor pulses into the reactor and chemically adsorb and react on the deposition substrate, and single-atom Form of film A method of forming a deposited film layer by layer. During the deposition process, the first reactive precursor (precursor) is imported to the surface of the substrate material and held on the surface by chemisorption (saturated adsorption). When the second precursor is passed into the reactor, it will first be adsorbed on the surface of the first precursor, and then provide an activation energy to allow the two precursors to react and produce corres...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/52C23C16/04
Inventor 姜谦
Owner PIOTECH CO LTD
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