Heating device and substrate treatment device applying same

Abstract

The invention provides a heating device which is used for heating a substrate in a substrate treatment device. The heating device comprises a plurality of heating lamps and a mounting plate for mounting the plurality of the heating lamps, as well as a rotating mechanism connected with the mounting plate, wherein the rotating mechanism is used for driving the mounting plate to do rotation motion so as to realize fast and uniform heating of the substrate. In addition, the invention further provides the substrate treatment device applying the heating device.

Description

technical field [0001] The invention relates to the technical field of microelectronic processing, in particular to a heating device and substrate processing equipment using the heating device. Background technique [0002] With the advancement of technology, the semiconductor integrated circuit industry, as an important microelectronic product industry, is constantly updating at an alarming rate. Among them, the PVD process used to prepare the copper interconnection layer in the integrated circuit is a very critical technical link. [0003] see figure 1 , is a schematic diagram of the main process of the current PVD process. As shown in the figure, several steps such as degassing, pre-cleaning and Ta(N) deposition are required before Cu deposition. Wherein, the degassing step refers to a process step of heating the substrate to a certain temperature (usually 350° C. or higher) to remove water vapor and other volatile impurities on the substrate. Moreover, during the sub...

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Problems solved by technology

[0006] In the above-mentioned heating chamber, the heating bulb located above the substrate heats the substrate by direct irradiation, which causes the area of ​​the substrate surface that is closer to the heating bulb to receive more heat radiation than the area farther away from the heating bulb. The thermal radiation received; specifically, the thermal radiation received by the substrate area directly facing the heating bulb will be significantly greater than the thermal radiation received by the substrate area around the heating bulb, resulting in the corresponding substrate at the interval position of the heating bulb The heat radiation received by the area is obviously low; thus, it causes the problem of uneven temperature of the substrate area facing the heating bulb and the space between the heating bulb

If the above-mentioned problem of uneven heating cannot be effectively improved, it will not only affect the uniformity of the subsequent process of the substrate, but may also cause problems such as substrate breakage in severe cases

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