Method for measuring voltage transmittance under influence of direct-current bias voltage and equipment
A technology of DC voltage and DC bias voltage, which is applied in the direction of measuring electricity, measuring electrical variables, measuring devices, etc., and can solve problems such as lowering reliability
Inactive Publication Date: 2014-08-06
BOE TECH GRP CO LTD +1
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It can be seen that the existing method of measuring the voltage transmittance under the influence of DC bias voltage is not the influence of the source DC bias voltage on the liquid crystal molecules under normal working conditions, but a comprehensive result, so The credibility of the conclusions obtained from the analysis on this basis is also greatly reduced.
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[0028] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.
[0029] It should be noted that in each of the following embodiments, an AC voltage is applied to the source of the liquid crystal cell in actual operation. Since the reference voltage is a DC voltage, the effect is equivalent to that in a certain period of time. The source is always loaded with a DC voltage.
[0030] The method for measuring the voltage transmittance under the influence of DC bias provided by the embodiment of the present invention, such as f...
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An embodiment of the invention provides a method for measuring voltage transmittance under the influence of direct-current bias voltage and equipment, which relate to the field of testing of liquid crystal display products and can eliminate influence of grid electrode direct-current bias voltage born by a TFT (thin film transistor). The scheme includes that direct-current voltage VG is added to a grid electrode of a liquid crystal box to be tested, direct-current VD is added to a source electrode of the liquid crystal box to be tested, the voltage transmittance is measured after specified time t, and a voltage transmittance curve is obtained and is marked as T'; the liquid crystal box to be tested is opened, direct-current voltage VG is added to the grid electrode of the liquid crystal box to be tested, characteristic values of the TFT are measured after specified time t, and a TFT characteristic value curve is obtained and is marked as A; a liquid crystal box with a TFT characteristic value curve which is different from the A within a specified error range is found in a database, and voltage transmittance curve of the liquid crystal box without the influence of direct-current bias voltage is obtained and is marked as T''; and direct-current voltage VD added to the source electrode of the liquid crystal box to be tested is obtained, and a voltage transmittance curve T after specified time t meets the equation of T=T'-T''.
Description
technical field [0001] The invention relates to the field of liquid crystal display product testing, in particular to a method and equipment for measuring the voltage transmittance under the influence of a DC bias voltage. Background technique [0002] For a long time, how to overcome the influence of DC bias voltage has been one of the biggest issues and difficulties of LCD liquid crystal display screens. This effect is mainly reflected in two aspects: on the one hand, the liquid crystal molecules will change under the DC voltage in the same direction for a long time; on the other hand, the semiconductor circuit made on the glass substrate is also easily affected by the DC bias . That is, the influence of the DC bias voltage on the source on the liquid crystal molecules and the influence of the DC bias voltage on the gate on the characteristics of TFT (Thin Film Transistor, Thin Film Field Effect Transistor). Therefore, traditional measurement equipment is also divided int...
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IPC IPC(8): G09G3/00G01R31/00
Inventor 吴昊
Owner BOE TECH GRP CO LTD