Substrate heating chamber, method using same, and substrate processing equipment

Abstract

The invention provides a substrate heating chamber, a method using the substrate heating chamber, and substrate processing equipment. The substrate heating chamber can be used for heating up at least two of substrates simultaneously, and is used for heating up the substrate before a substrate processing technology. The substrate is heated by the substrate heating chamber, so that the problem that the follow-up substrate processing technology is under the idle condition since the substrate is waited to be heated up can be effectively avoided; and therefore, the capacity factor of the equipment can be effectively improved. Furthermore, according to the method using the substrate heating chamber and the substrate processing equipment, the capacity factor of the equipment can be effectively improved.

Description

technical field [0001] The invention relates to the technical field of microelectronic processing, in particular to a substrate heating chamber, a method for using the substrate heating chamber and substrate processing equipment. Background technique [0002] With the continuous advancement of integrated circuit production technology, the integration level of circuit chips has been greatly improved. At present, the number of transistors integrated in a chip has reached an astonishing tens of millions, and the signal integration of such a large number of active components requires more than ten layers of high-density metal interconnection layers for connection. Therefore, as an important process for preparing the above-mentioned metal interconnection layer, physical vapor deposition (Physical Vapor Deposition, hereinafter referred to as PVD) technology, especially the magnetron sputtering technology in PVD has been widely used. [0003] see figure 1 , is a system schematic ...

AI Technical Summary

Problems solved by technology

Since the degassing process is the first step of the entire sputtering process and this process takes the longest time, and because each degassing chamber can only process one substrate at a time; H

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