Light emitting diode structure

Abstract

The present invention relates to a light emitting diode structure, comprising a substrate, a first semiconductor layer, a first metal electrode, a second semiconductor layer, a conductive layer and a second metal electrode and at least a transparent conductive extending member, the disclosed transparent conductive extending member is arranged above the conductive layer and jointed with the second metal electrode, the transparent conductive extending member is prepared by a conductive material. Through the transparent conductive extending member, the condition that the light emitted by the light emitting diode is shielded or absorbed can be reduced, thereby allowing the current to be uniformly distributed, and the increasing the light emitting efficiency of the light emitting diode.

Description

technical field [0001] The invention relates to a light emitting diode structure, in particular to a light emitting diode structure capable of improving luminous efficiency. Background technique [0002] Light sources are indispensable in human life. With the development of technology, lighting tools with better illuminance and more energy-saving are gradually emerging. Currently, the most commonly used lighting source is a light-emitting diode (Light-Emitting Diode, LED). A light-emitting diode is a solid-state semiconductor component that uses current to combine two types of carriers generated in the diode to release energy in the form of light. Light-emitting diodes have the advantages of small size, power saving, good luminous efficiency, long life, and fast operation response speed, and have no thermal radiation and mercury and other toxic substances. Therefore, they are widely used in various fields, especially in the promotion of " Under the advocacy of "Energy Savi...

AI Technical Summary

Problems solved by technology

[0006] However, the conductive extension 42 is not a light-transmitting material, so when the light-emitting layer emits light, the arrangement of the conductive extension 42 absorbs light and reduces the luminous efficiency.

Moreover, the prior art further provides at least one insulating extension 34, the insulating extension 34 is connected to the insulating member 32, the insulating extension 34 is located between the conductive layer 18 and the second semiconductor layer 16, and the insulating extension 34 is used to shield The current insulating extension 34 where the second semiconductor layer 16 is located and where the conductive extension 42 passes will also absorb light and reduce the luminous efficiency.

Images