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Preparation method for double-faced power generation metal wrap through (MWT) solar cell

A technology for solar cells and silicon wafers, applied in the field of solar cells, can solve the problems of increasing process complexity and flow, damage to the mask coverage area, etc., and achieves the effects of being beneficial to cost control, avoiding battery leakage, and simplifying the process flow

Inactive Publication Date: 2012-07-18
YINGLI ENERGY CHINA
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Problems solved by technology

This method can better remove the back field in the non-masked area, but it has high requirements on the mask quality. If the mask quality is not good, the alkaline solution may cause damage to the masked area during cleaning. damage; in addition, this method also needs to consider how to form a suitable mask shape, and also use chemical equipment for alkali cleaning, which increases the process complexity and process

Method used

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  • Preparation method for double-faced power generation metal wrap through (MWT) solar cell
  • Preparation method for double-faced power generation metal wrap through (MWT) solar cell

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preparation example Construction

[0027] refer to figure 1 , figure 1 It is a schematic flowchart of a method for preparing a double-sided power generation MWT solar cell provided by an embodiment of the present invention, and the method specifically includes the following steps:

[0028] Step S1: forming a PN junction on the upper surface of the silicon wafer, and forming a back field on the lower surface.

[0029] A PN junction is formed on the upper surface of the silicon wafer through a high-temperature diffusion process, that is, the emitter is formed; and then a highly doped region is formed on the lower surface of the silicon wafer through a diffusion process, that is, the back field.

[0030] Step S2: using a laser to drill holes at preset positions on the silicon wafer.

[0031] The laser used in this step is a pulse laser, which can be a solid pulse laser or a gas pulse laser. The wavelength of the laser can be from 300nm to 1600nm, the pulse length can be from 10ps to 300ns, and the repetition rat...

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Abstract

The embodiment of the invention discloses a preparation method for a double-faced power generation metal wrap through (MWT) solar cell. The method comprises the following steps of: forming a positive-negative (PN) junction on the upper surface of a silicon wafer, and forming a back field on the lower surface of the silicon wafer; drilling a hole at the preset position of the silicon wafer by adopting lasers; printing a corrosive material within a preset range around the hole drilled by the lasers by adopting a screen printing process; drying the corrosive material; and cleaning the silicon wafer. When the double-faced power generation solar cell is prepared by adopting the method provided by the invention, an affected layer caused by laser hole drilling is also removed while the back field is removed, and moreover, the process flow is simplified, and the cost is favorably controlled.

Description

technical field [0001] The invention relates to the technical field of solar cells, in particular to a preparation method of a double-sided power generation MWT solar cell. Background technique [0002] Bifacial power generation solar cells, whose two surfaces can convert light energy into electrical energy, can greatly increase the output power of solar cells. When metal wrap through technology (MWT, Metal Wrap Through) is introduced into double-sided power generation solar cells, it is necessary to remove the back field in some areas. Double-sided power generation MWT solar cells lead the front grid lines to the back through the via hole paste, and form a paste point with a diameter of 2-5mm on the back to facilitate the formation of components. Insulation treatment is required between the front gate line and the back gate line corresponding to the via hole, and due to the existence of the back diffusion field (referred to as the back field), the contact between the via h...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 陈迎乐赵文超王建明王子谦沈燕龙李高非胡志岩熊景峰
Owner YINGLI ENERGY CHINA
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