Techniques for achieving low resistance contacts to nonpolar and semipolar p-type (al,ga,i)n

A semi-polar, non-polar technology used in circuits, electrical components, semiconductor devices, etc.

Inactive Publication Date: 2012-07-18
RGT UNIV OF CALIFORNIA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Prior Art Conventional non-polar (Al, Ga, In)N devices do not apply these technologies

Method used

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  • Techniques for achieving low resistance contacts to nonpolar and semipolar p-type (al,ga,i)n
  • Techniques for achieving low resistance contacts to nonpolar and semipolar p-type (al,ga,i)n
  • Techniques for achieving low resistance contacts to nonpolar and semipolar p-type (al,ga,i)n

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Embodiment Construction

[0028] In the following description of the preferred embodiments, reference is made to the accompanying drawings which form a part hereof, and in which are shown by way of example specific embodiments in which the invention may be practiced. It is to be understood that other embodiments may be utilized and structural changes may be made without departing from the scope of the present invention.

[0029] overview

[0030] The aim of the present invention is to develop low contact resistance for nonpolar and semipolar (Al, Ga, In)N optoelectronic and electronic devices. Compared with conventional (Al, Ga, In)N devices, this invention has the following advantages.

[0031] 1. N at atmospheric pressure 2 and NH 3 At ambient conditions, the use of Cp2Mg flow leads to the formation of Mg-N layer, and leads to reduced p-contact resistance. The presence of Mg and N during cooling prevents O incorporation on the surface of the p-GaN layer and also prevents N vacancy formation. Si...

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Abstract

A method of fabricating a p-type contact on a nonpolar or semipolar (Al,Ga,In)N device, includes the steps of growing a p-type layer on an (Al,Ga,In)N device, wherein the (Al,Ga,In)N device is a nonpolar or semipolar (Al,Ga,In)N device, and the p-type layer is a nonpolar or semipolar (Al,Ga,In)N layer; and cooling the p-type layer down, in the presence of Bis(Cyclopentadienyl)Magnesium (Cp2Mg), to form a magnesium-nitride (MgxNy) layer on the p-type layer. A metal deposition is performed to fabricate a p-type contact on the p-type layer of the (Al,Ga,In)N device, after the cooling step, wherein the p-type contact has a contact resistivity lower than a p-type contact of a polar (Al,Ga,In)N device with substantially similar composition. A hydrogen chloride (HCl) pre-treatment of the p-type layer may be performed, after the cooling step and before the metal deposition step.

Description

[0001] Cross References to Related Applications [0002] This application is based on 35 U.S.C § 119(e) claim of the co-pending and commonly assigned U.S. provisional patent application series filed on November 3, 2009 by You-Da Lin, Arpan Chakraborty, Shuji Nakamura and Steven P. Den Baars Priority No. 61 / 257,759 entitled "TECHNIQUES FOR ACHIEVING LOW RESISTANCE CONTACTS TO SEMIPOLAR P-TYPE (AL, GA, IN)N)", Attorney Docket No. 30794.338-US-P1, which application is incorporated herein by reference. [0003] This application is related to the following co-pending and commonly assigned U.S. patent applications: [0004] On November 3, 2010, the U.S. provisional application for "CONTACT TO P-TYPE NITRIDE SEMICONDUCTOR" was submitted by Arpan Chakraborty, Hsun Chih Kuo, Shuji Nakamura, and Steven P. DenBaars. Application Serial No. 61 / 257,757, Attorney Docket No. 30794.336-US-P1(2010-266); [0005] This application is incorporated herein by reference. [0006] Statement Regardin...

Claims

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Application Information

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Patent Type & AuthorityApplications(China)
IPC IPC(8): H01L21/00H01L33/00
CPCH01L21/02389H01L21/0262H01L2933/0016H01L33/40H01L33/0075H01L21/02579H01L33/16H01L21/0254
InventorY-D·林A·查克拉伯蒂S·纳卡姆拉S·P·德恩巴阿斯
OwnerRGT UNIV OF CALIFORNIA